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US 7,115,241 B2Granted
Ultrahard diamonds and method of making thereof
AssigneeCarnegie Institution of Washington
InventorsRussell J. Hemley, Ho-Kwang Mao, Chih-shiue Yan
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Abstract
A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.
Claims7
A method for manufacture a hard single crystal diamond comprising:
- growing a single crystal diamond;
- and
- annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.
Dependencies are inferred from the claim text.