Phosphor for light sources and associated light source
AssigneesPatent-Treuhand-Gesellschaft fuer elektrische Gluehlampen mbH, Osram Opto Semiconductors GmbH & Co. OHG
InventorsFranz Kummer, Franz Zwaschka, Andries Ellens, Alexandra Debray, Guenther Waitl
Life of this patent
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Abstract
A phosphor for light sources, the emission from which lies in the short-wave optical spectral region, as a garnet structure A3B5O12. It is activated with Ce, the second component B representing at least one of the elements Al and Ga, and the first component A is terbium or terbium together with at least one of the elements Y, Gd, La and/or Lu. In a preferred embodiment, a phosphor having a garnet of structure (Tb1−x−yRExCEy)3(Al,Ga)5O12, where RE=Y, Gd, La and/or Lu; 0≦x≦0.5−y; 0<y<0.1 is used.
Claims41
A method of making a white light source, comprising:
- encapsulating a light-emitting diode in an epoxy resin having a phosphor dispersed therein, the light emitting diode having an emission from 420 to 490 nm, and the phosphor having a garnet structure as represented by A3B5O12:Ce wherein A is terbium or terbium together with at least one of the elements Y, Gd, La, and/or Lu and B is at least one of the elements Al and Ga, the phosphor converting at least a part of the emission from the light-emitting diode into a longer-wave radiation.
A method of making a white light source, comprising:
- encapsulating a light-emitting diode in an epoxy resin having a phosphor dispersed therein, the light emitting diode having an emission from 420 to 490 nm, the phosphor converting at least a portion of the emission from the light-emitting diode into a longer-wave radiation and having a garnet structure represented by
- (Tb1−x−yRExCey)3(Al,Ga)5O12, where
- RE is Y, Gd, La and/or Lu;
- 0≦x≦0.5−y;
- and
- 0<y<0.1.
A method of making a white light source, comprising:
- encapsulating a light-emitting diode in an epoxy resin having a phosphor dispersed therein, the light emitting diode having an emission from 420 to 490 nm, the phosphor converting at least a portion of the emission from the light-emitting diode into a longer-wave radiation, the phosphor having a garnet structure represented by
- (TbxRE1−x−yCey)3(Al,Ga)5O12, where
- RE is Y, Gd, La and/or Lu;
- 0.01≦x≦0.02;
- and
- 0<y<0.1.
A process for producing a phosphor having a garnet structure as represented by A3B5O12:Ce, wherein A is terbium or terbium together with at least one of the elements Y, Gd, La, and/or Lu and B is at least one of the elements Al and Ga, the process comprising:
- (a) intimately mixing cerium oxide, oxides of A and B, and at least one flux to form a mixture;
- and
- (b) firing the mixture in forming gas to form the phosphor.
A process for producing a phosphor having a garnet structure as represented by A3B5O12:Ce, wherein A is terbium or terbium together with at least one of the elements Y, Gd, La, and/or Lu and B is at least one of the elements Al and Ga, the process comprising:
- (a) intimately mixing cerium oxide, oxides of A and B, and at least one flux to form a mixture;
- (b) firing the mixture in forming gas;
- (c) milling the fired mixture;
- and
- (d) firing the mixture in forming gas for a second time to form the phosphor.
A process for producing a phosphor having a garnet structure as represented by
- (Tb1−x−yRExCey)3(Al,Ga)5O12, where
- RE is Y, Gd, La and/or Lu
- 0≦x≦0.5−y;
- and
- 0<y<0.1;
- the process comprising:
- (a) intimately mixing cerium oxide and terbium oxide with at least one flux and at least one oxide of RE, Al, and/or Ga, to form a mixture;
- (b) firing the mixture in forming gas;
- (c) milling the fired mixture;
- and
- (d) firing the mixture in forming gas for a second time to form the phosphor.
Dependencies are inferred from the claim text.