Method for etching
AssigneeFeldman Technology Corporation
InventorsDouglas McLean, Bernard Feldman
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Abstract
A method of etching a metal oxide film includes depositing a metal (M) on the metal oxide film and contacting the metal oxide film and the metal (M) with an etch liquid comprising an acid (A) and a metal dissolution agent (X). The method can avoid patchwise etch.
Claims7
The M-A-X method of etching a masked metal oxide film on a substrate in which a metal (M) is deposited on said film and an etch liquid comprising an acid (A) and a metal dissolution agent (X) is brought into contact with said film and metal such that the metal oxide is reduced to its metallic form through the action of active hydrogen (H0) produced in the reaction of M with A and in which the additional reaction of M with X produces an agent that controls the penetrability of the reduced metal oxide to H0 so as to control undercut, wherein said method avoids patchwise etch, and said metal oxide is selected from the group consisting of indium tin oxide, zinc oxide, and tin oxide doped with fluorine.
Dependencies are inferred from the claim text.