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US 7,115,211 B2Granted
Endpoint detection using laser interferometry
AssigneeTokyo Electron Limited
InventorDeana R. Delp
Life of this patent
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Abstract
A method and system for determining an endpoint in a (near) real-time environment using statistical process control. By utilizing such control, an endpoint of a semiconductor process (e.g., an etch) can be monitored. Monitoring may lead to increased yields by avoiding or reducing error conditions (e.g., under- or over-etching).
Claims7
A method of monitoring a semiconductor process comprising:
- obtaining measurements from an ongoing semiconductor process using laser interferometry to detect an endpoint for the semiconductor process;
- generating at least one control chart using statistical process control techniques during the ongoing semiconductor process in order to derive, from an analysis of multiple endpoints, control limits for the semiconductor process;
- and
- determining if the ongoing semiconductor process is operating within the control limits.
1 more element
Dependencies are inferred from the claim text.