Measurement to determine plasma leakage
AssigneeInternational Business Machines Corporation
InventorsRobert A. Calderoni, June Cline, Kellie L. Dutra, Ronald G. Meunier, Joseph P. Walko, Justin Wai-chow Wong
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Abstract
Disclosed is a method and system for detecting abnormal plasma discharge that is useful in, for example, detecting plasma leakage in a reactive ion etching (RIE) chamber. The system includes electrical contacts connected to the chamber that provide an input signal to the chamber. This input signal can be generated by a radio frequency (RF) generator that is connected to the electrical contacts. A variable power controller connected to the RF generator gradually increases (ramps) the power of the input signal being supplied to the chamber.
Claims14
A method of detecting abnormal plasma discharge in a chamber, said method comprising:
- providing an input signal to said chamber;
- monitoring impedance of said chamber;
- and
- detecting whether an abnormal plasma discharge exists in said chamber by detecting an abrupt change in said impedance,
- wherein said abnormal plasma discharge comprises plasma leakage, and
- wherein said plasma leakage comprises formation of a region of secondary plasma in a location different from a primary plasma formation location.
A method of detecting plasma leakage in a reactive ion etching (RIE) chamber, said method comprising:
- providing an input signal to said chamber using electrical contacts;
- gradually increasing the power of said input signal;
- monitoring impedance of said electrical contacts to determine the voltage of said chamber;
- and
- detecting whether plasma leakage exists in said chamber by detecting an abrupt drop in peak-to-peak voltage of said chamber,
- wherein said plasma leakage comprises formation of a region of secondary plasma in a location different from a primary plasma formation location.
Dependencies are inferred from the claim text.