Anodic bonding process for ceramics

A method of bonding components, comprising the steps of:

• providing at least a first ceramic component and a second component;
• the at least first ceramic component and the second component each having an upper and lower surface, the second component being comprised of a silicon layer or a semiconductor layer;
• forming a conductive layer over the upper surface of the first ceramic component;
• forming an intermediate film over the conductive layer;
• then stacking the second component over the first ceramic component wherein the upper or lower surface of the second component opposes the intermediate film on the first ceramic component;
• and
• anodically bonding together the at least a first ceramic component and the second component;
• wherein at least one transition layer is formed upon at least one of the at least a first ceramic component and the second component, the at least one transition layer is comprised of AlxOy, TixCy, Ti or TiW.

A method of bonding components, comprising the steps of:

• providing at least a first ceramic component and a second ceramic component, each of the at least first and second ceramic components having an upper and lower surface;
• polishing the upper and lower surfaces of the at least the first and second ceramic components;
• cleansing the polished upper and lower surfaces of the at least first and second ceramic components;
• forming a first conductive layer over the cleansed upper surface of the first ceramic component;
• forming an intermediate film over the first conductive layer;
• forming a second conductive layer over the cleansed lower surface of the second ceramic component;
• then drying the first ceramic component;
• then cleansing at least one of the first and second ceramic components;
• then stacking the second ceramic component over the first ceramic component wherein the second conductive layer on the second ceramic component opposes the intermediate film on the first ceramic component;
• and
• anodically bonding together the first and second ceramic components at a temperature of from about 100 to 400° C.;
• wherein at least one transition layer is formed upon at least one of the first and second ceramic components.

A method of bonding ceramic components, comprising the steps of:

• providing at least a first ceramic component and a second ceramic component, each of the at least first and second ceramic components having an upper and lower surface;
• polishing the upper and lower surfaces of the at least the first and second ceramic components;
• cleansing the polished upper and lower surfaces of the at least first and second ceramic components;
• forming a first transition layer over the cleansed upper surface of the first ceramic component;
• forming a first conductive layer over the first transition layer;
• forming an intermediate film over the first conductive layer;
• the intermediate film including alkaline ions or not including alkaline ions;
• forming a second transition layer over the cleansed lower surface of the second ceramic component;
• forming a second conductive layer over the second transition layer;
• then drying the first ceramic component;
• then cleansing at least one of the first and second ceramic components;
• then stacking the second ceramic component over the first ceramic component wherein the second conductive layer on the second ceramic component opposes the intermediate film on the first ceramic component;
• and
• anodically bonding together the first and second ceramic components at a temperature of from about 100 to 400° C.