Microdischarge devices and arrays having tapered microcavities
AssigneeThe Board of Trustees of the University of Illinois
InventorsJ. Gary Eden, Sung-Jin Park, Jack Chen, Chang Liu
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Abstract
A microdischarge device has a semiconductor layer, an intermediate layer, and a conductive layer. A tapered cavity is disposed in at least the semiconductor layer.
Claims55
A microdischarge device, comprising:
- a first layer having a tapered cavity disposed therein;
- an intermediate layer on the first layer;
- and
- a second layer on the intermediate layer, the intermediate layer electrically insulating the first layer from the second layer, the first and second layers having a conductivity larger than that of the intermediate layer;
- wherein the cavity extends through at least a surface of the second layer.
A microdischarge device, comprising:
- a first layer having a tapered cavity disposed therein;
- an intermediate layer on the first layer;
- and
- a second layer on the intermediate layer, the intermediate layer electrically insulating the first layer from the second layer, the first and second layers having a conductivity larger than that of the intermediate layer;
- wherein the cavity has an inverted square pyramidal shape.
A microdischarge device, comprising:
- a first layer having a tapered cavity disposed therein;
- an intermediate layer on the first layer;
- and
- a second layer on the intermediate layer, the intermediate layer electrically insulating the first layer from the second layer, the first and second layers having a conductivity larger than that of the intermediate layer;
- wherein the first layer, the intermediate layer and the second layer form a diode, and the intermediate layer is a depletion region of the diode;
- and
- wherein the first layer is a semiconductor.
A microdischarge device, comprising:
- a first layer having a tapered cavity disposed therein;
- an intermediate layer on the first layer;
- and
- a second layer on the intermediate layer, the intermediate layer electrically insulating the first layer from the second layer, the first and second layers having a conductivity larger than that of the intermediate layer;
- wherein the intermediate layer comprises at least one dielectric layer;
- and
- wherein an angle of taper of the cavity is at least 20 degrees and at most 60 degrees.
A microdischarge device, comprising:
- a first layer having a tapered cavity disposed therein;
- an intermediate layer on the first layer;
- and
- a second layer on the intermediate layer, the intermediate layer electrically insulating the first layer from the second layer, the first and second layers having a conductivity larger than that of the intermediate layer;
- wherein the intermediate layer comprises at least one dielectric layer;
- and
- wherein an area of the cavity at a surface of the first layer is not greater than 104 μm2.
A microdischarge device, comprising:
- a first layer having a tapered cavity disposed therein;
- an intermediate layer on the first layer;
- and
- a second layer on the intermediate layer, the intermediate layer electrically insulating the first layer from the second layer, the first and second layers having a conductivity larger than that of the intermediate layer;
- wherein the intermediate layer comprises at least one dielectric layer;
- and
- wherein a depth of the tapered cavity in the first layer is not greater than 100 μm.
A microdischarge device, comprising:
- a first layer having a tapered cavity disposed therein;
- an intermediate layer on the first layer;
- and
- a second layer on the intermediate layer, the intermediate layer electrically insulating the first layer from the second layer, the first and second layers having a conductivity larger than that of the intermediate layer;
- wherein side walls of the cavity are coated with a film that reflects light.
A microdischarge device, comprising:
- a first layer having a tapered cavity disposed therein;
- an intermediate layer on the first layer;
- and
- a second layer on the intermediate layer, the intermediate layer electrically insulating the first layer from the second layer, the first and second layers having a conductivity larger than that of the intermediate layer;
- wherein the second layer comprises an electrically conducting screen disposed on an end of the cavity.
A microdischarge device, comprising:
- a semiconductor layer having a tapered cavity disposed therein;
- an intermediate layer on the semiconductor layer;
- and
- a second layer on the intermediate layer, the intermediate layer electrically insulating the semiconductor layer from the second layer;
- wherein the cavity extends through at least a surface of the second layer.
A microdischarge device, comprising:
- a semiconductor layer having a tapered cavity disposed therein;
- an intermediate layer on the semiconductor layer;
- and
- a second layer on the intermediate layer, the intermediate layer electrically insulating the semiconductor layer from the second layer;
- wherein the semiconductor layer, the intermediate layer and the second layer form a diode and the intermediate layer is a depletion region of the diode.
A microdischarge device, comprising:
- a semiconductor layer having a tapered cavity disposed therein;
- an intermediate layer on the semiconductor layer;
- and
- a second layer on the intermediate layer, the intermediate layer electrically insulating the semiconductor layer from the second layer;
- wherein the second layer is a metal;
- and
- wherein an angle of taper of the cavity is at least 20 degrees and at most 60 degrees.
A microdischarge device, comprising:
- a semiconductor layer having a tapered cavity disposed therein;
- an intermediate layer on the semiconductor layer;
- and
- a second layer on the intermediate layer, the intermediate layer electrically insulating the semiconductor layer from the second layer;
- wherein the second layer is a metal;
- and
- wherein an area of the cavity at a surface of the semiconductor layer is not greater than 104 μm2.
A microdischarge device, comprising:
- a semiconductor layer having a tapered cavity disposed therein;
- an intermediate layer on the semiconductor layer;
- and
- a second layer on the intermediate layer, the intermediate layer electrically insulating the semiconductor layer from the second layer;
- wherein the second layer is a metal;
- and
- wherein a depth of the cavity in the semiconductor layer is not greater than 100 μm.
A microdischarge device, comprising:
- a semiconductor layer having a tapered cavity disposed therein;
- an intermediate layer on the semiconductor layer;
- and
- a second layer on the intermediate layer, the intermediate layer electrically insulating the semiconductor layer from the second layer;
- wherein the intermediate layer comprises at least one dielectric layer having a lower electrical conductivity than the semiconductor and second layers;
- and
- wherein the intermediate layer comprises a plurality of dielectric layers, at least two of the plurality of dielectric layers having different dielectric constants.
A microdischarge device, comprising:
- a semiconductor layer having a tapered cavity disposed therein;
- an intermediate layer on the semiconductor layer;
- and
- a second layer on the intermediate layer, the intermediate layer electrically insulating the semiconductor layer from the second layer;
- wherein side walls of the cavity are coated with a film that reflects light.
A microdischarge device, comprising:
- a semiconductor layer having a tapered cavity disposed therein;
- an intermediate layer on the semiconductor layer;
- and
- a second layer on the intermediate layer, the intermediate layer electrically insulating the semiconductor layer from the second layer;
- wherein the second layer comprises an electrically conducting screen disposed on an end of the cavity.
Dependencies are inferred from the claim text.