Tunable wavelength laser
AssigneeFujitsu Limited
InventorsAkinori Hayakawa, Yoshihiro Sato, Ken Morito, Norihiko Sekine
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Abstract
A light oscillation part including an active layer for generating light by current injection, a tuning layer with an intermediate layer formed between the active layer and the tuning layer, for varying an oscillation wavelength by current injection and a diffraction grating formed near the active layer and the tuning layer, and a light amplification part including an active layer for amplifying light by current injection are formed on a semiconductor substrate. Light oscillation elements having wide wavelength variation ranges and the light amplification are integrated on a semiconductor substrate, whereby wide wavelength variation ranges can be obtained and the output light can be much increased.
Claims35
A photosemiconductor device comprising:
- a light oscillation part formed in a first region of a first conduction-type semiconductor substrate and including a first active layer which generates light by current injection, a wavelength tuning layer with a second conduction-type intermediate layer formed between the first active layer and the wavelength tuning layer, for varying an oscillation wavelength by current injection, and a diffraction grating formed near the first active layer and the wavelength tuning layer;
- and
- a light amplification part formed in a second region of the semiconductor substrate and including a second active layer which amplifies light by current injection, for amplifying light generated by the light oscillation part,
- the light amplification part being processed in a mesa stripe, and
- the device further comprising one electrode for leading out current from the light amplification part, said one electrode being positioned at the side surface of the mesa stripe.
A photosemiconductor device comprising:
- a light oscillation part formed in a first region of a first conduction-type semiconductor substrate and including an active layer, for generating light by current injection, and a wavelength tuning layer with a second-conduction type intermediate layer formed between the active layer and the wavelength tuning layer, for varying an oscillation wavelength of the active layer by current injection;
- and
- an optical waveguide part including an insulation film formed in a second region of the semiconductor substrate and an optical waveguide layer formed above the insulation film, for guiding light output from the light oscillation part.
A photosemiconductor device comprising:
- a light oscillation part formed on a first conduction-type semiconductor substrate and including a plurality of light oscillation elements which include an active layer for generating light by current injection, a wavelength tuning layer with a second conduction-type intermediate layer formed between the active layer and the wavelength tuning layer, for varying an oscillation wavelength by current injection, and a diffraction grating formed near the active layer and the wavelength tuning layer;
- and
- a current leading-out part for selectively leading out current injected into the active layer or the wavelength tuning layer from the intermediate layer of an arbitrary one of the light oscillation elements.
Dependencies are inferred from the claim text.