Electron spin mechanisms for inducing magnetic-polarization reversal
AssigneeIntel Corporation
InventorsEric C. Hannah, Michael A. Brown
Life of this patent
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Abstract
An apparatus includes a low magnetic-coercivity layer of material (LMC layer) having a majority electron-spin-polarization (M-ESP), an energy-gap coupled with the LMC layer, wherein a flow of spin-polarized electrons having an electron-spin-polarization anti-parallel to the LMC layer are injected via the energy-gap, to change the M-ESP of the LMC layer. A non-magnetic material is in electrical communication with the LMC layer and provides a spin-balanced source of current to the LMC layer, responsive to the injection of spin-polarized electrons into the LMC layer.
Claims31
A method comprising:
- polarizing a high magnetic-coercivity layer of material (HMC layer) with a first majority electron-spin-polarization (M-ESP);
- depositing an energy-gap layer on the HMC layer;
- and
- depositing a low magnetic-coercivity layer of material (LMC layer) on the energy-gap layer.
An apparatus, comprising:
- a polarized high magnetic-coercivity layer of material (HMC layer) with a first majority electron-spin-polarization (M-ESP);
- a low magnetic-coercivity layer of material (LMC layer);
- and
- an energy-gap layer positioned between the HMC layer and the LMC layer.
A system, comprising:
- a processor;
- and
- a magnetic random access memory (MRAM) coupled with the processor, the MRAM comprising:
- a polarized high magnetic-coercivity layer of material (HMC layer) with a first majority electron-spin-polarization (M-ESP);
- a low magnetic-coercivity layer of material (LMC layer);
- and
- an energy-gap layer positioned between the HMC layer and the LMC layer.
Dependencies are inferred from the claim text.