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US 7,112,286 B2Granted
Thin film resistor structure and method of fabricating a thin film resistor structure
AssigneeTexas Instruments Incorporated
InventorsBrian Vialpando, Eric William Beach, Philipp Steinmann
Life of this patent
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Abstract
A thin film resistor structure and a method of fabricating a thin film resistor structure is provided. The thin film resistor structure includes an electrical interface layer or head layer that is a combination of a Titanium (Ti) layer and a Titanium Nitride (TiN) layer. The combination of the Ti layer and the TiN layer mitigates resistance associated with the electrical interface layers.
Claims12
A method of fabricating a thin film resistor (TFR) structure comprising:
- forming a TFR;
- forming a dielectric layer over the TFR;
- forming a first TFR via in the dielectric layer over a first end of the TFR and forming a second TFR via in the dielectric over a second end of the TFR;
- forming a layer of titanium (Ti) over the first and second TFR vias;
- and
- forming a layer of titanium nitride (TiN) on the (Ti) layer, the layer of Ti and the layer of TiN forming a first electrical interface portion to the first end of the TFR and a second electrical interface portion to the second end of the TFR.
3 more elements
A method for forming a thin film resistor (TFR) structure, the method comprising:
- forming a dielectric layer over a TFR layer;
- etching the dielectric layer at least cone to form first TFR vias in the dielectric layer to form contact pads on a first end and a second end of the TFR layer;
- sputter etching the dielectric layer and the TFR layer to remove any remaining oxide;
- forming a layer of titanium (Ti) in the first TFR vias and over the oxide layer;
- forming a layer of titanium nitride (TiN) on the (Ti) layer;
- etching the titanium (Ti) layer and titanium nitride (TiN) layer to form an opening that defines a first electrical interface portion coupled to the first end of the TFR layer and a second electrical interface portion coupled to the second end of the TFR layer;
- and
- forming a first contact coupled to the first electrical interface portion and a second contact coupled to the second electrical interface portion.
5 more elements
Dependencies are inferred from the claim text.