Method for producing Group III nitride compound semiconductor
AssigneeToyoda Gosei Co., Ltd.
InventorsMasayoshi Koike, Shiro Yamazaki
Life of this patent
Estimating the term…
Abstract
The present invention provides a method for producing a Group III nitride compound semiconductor, which method permits only minimal reaction of the semiconductor with a hetero-substrate during epitaxial growth and induces no cracks in the Group III nitride compound semiconductor even when the semiconductor is cooled to room temperature. The method includes a buffer layer formation step for forming a gas-etchable buffer layer on the hetero-substrate, and a semiconductor formation step for epitaxially growing the Group III nitride compound semiconductor on the buffer layer through a vapor phase growth method, wherein at least a portion of the buffer layer is gas-etched during or after the semiconductor formation step.
Claims24
A method for producing a Group III nitride compound semiconductor through epitaxial growth of the compound semiconductor by use of a substrate, the method comprising:
- forming a buffer layer on said substrate;
- and
- epitaxially growing a Group III nitride compound semiconductor on said buffer layer through a vapor phase growth method,
- wherein at least a portion of said buffer layer is gas-etched during said epitaxially growing a Group III nitride compound semiconductor in a same chamber in which said Group III nitride compound semiconductor is grown epitaxially.
A method of producing a Group III nitride compound semiconductor through epitaxial growth of the compound semiconductor by use of a substrate, the method comprising:
- forming a buffer layer on said substrate;
- and
- epitaxially growing a Group III nitride compound semiconductor on said buffer layer through a vapor phase growth method,
- wherein at least a portion of said buffer layer is gas-etched after said epitaxially growing a Group III nitride compound semiconductor and before starting cooling said substrate in a same chamber in which said Group III nitride compound semiconductor is grown epitaxially.
Dependencies are inferred from the claim text.