Manufacturing method for producing silicon carbide crystal using source gases
AssigneeDenso Corporation
InventorsKazukuni Hara, Masao Nagakubo, Shoichi Onda
Life of this patent
Estimating the term…
Abstract
A crucible, which has first member and second cylindrical body, is disposed in a lower chamber. A pedestal is disposed inside the first member, and a seed crystal is fixed to the pedestal. A second heat insulator is provided between an inlet conduit and a crucible. A first heat insulator is provided at a halfway portion of the inlet conduit. With these heat insulators, a temperature gradient occurs in the inlet conduit at a portion thereof that is closer to the crucible. A mixture gas is introduced into the crucible. The mixture gas is heated up gradually when passing through the inlet conduit and is introduced into the crucible to form SiC single crystals in high quality.
Claims14
A manufacturing method for producing silicon carbide single crystals, comprising:
- providing a silicon carbide single-crystal substrate as a seed crystal in a crucible;
- introducing a mixture gas having a gas including Si and a gas including C into said the crucible, whereby silicon carbide single crystals grow on said the silicon carbide single-crystal substrate, wherein
- an inlet conduit is provided for introducing the mixture gas into the crucible and
- includes a heat insulator in a circumferential groove on an outer surface for producing a temperature gradient, and
- a temperature gradient, which is measured from an outlet end of the inlet conduit to an inlet end of the inlet conduit, is such that a downstream temperature is higher than an upstream temperature.
A manufacturing method for producing silicon carbide single crystals, comprising:
- providing a silicon carbide single-crystal substrate as a seed crystal in a crucible;
- introducing a mixture gas having a gas including Si and a gas including C into the crucible, whereby silicon carbide single crystals grow on the silicon carbide single-crystal substrate, characterized in that:
- the mixture gas is mixed with a carrier gas, and the mixture gas and the carrier gas are then introduced into crucible through an inlet conduit including a heat insulator in a circumferential groove on an outer surface of the inlet conduit for introducing the mixture gas into the crucible.
A manufacturing method for producing silicon carbide single crystals comprising:
- providing a silicon carbide single-crystal substrate as a seed crystal in a crucible;
- introducing a mixture gas having a gas including Si and a gas including C into the crucible, whereby silicon carbide single crystals grow on the silicon carbide single-crystal substrate,
- wherein a temperature at an exhaust portion of the crucible through which the mixture gas is exhausted from the crucible is set higher than that at an introducing portion of the crucible through which the mixture gas is introduced into the crucible.
A manufacturing method for producing silicon carbide single crystals, comprising:
- providing a silicon carbide single-crystal substrate as a seed crystal in a crucible;
- introducing a mixture gas having a gas including Si and a gas including C into the crucible, whereby silicon carbide single crystals grow on the silicon carbide single-crystal substrate;
- checking a portion in the crucible where deposits caused by the mixture gas are formed using an x-ray apparatus provided outside of the crucible;
- and
- raising a temperature of the portion in the crucible with a temperature raising means provided outside of the crucible, which is movable with respect to the crucible, by shifting the temperature raising means.
A manufacturing method for producing silicon carbide single crystals, comprising:
- providing a silicon carbide single-crystal substrate as a seed crystal in a crucible, whereby silicon carbide single crystals grow on the silicon carbide single-crystal substrate;
- and
- passing the mixture gas through a trap for solidifying constituents of the mixture gas, wherein the mixture gas is exhausted from a growth room where growth of silicon carbide single crystals on the silicon carbide single-crystal substrate is performed in the crucible, wherein a temperature of the trap is set lower than that of the growth room.
Dependencies are inferred from the claim text.