Chemical-mechanical polishing (CMP) slurry containing clay and CeO2 abrasive particles and method of planarizing surfaces
AssigneeAMCOL International Corporation
InventorsMingming Fang, Michael R. Ianiro, Don Eisenhour
Life of this patent
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Abstract
A composition for planarizing or polishing a surface comprising (a) a liquid carrier, and (b) solids comprising about 0.1 to about 10% by weight clay abrasive particles, and about 0.1% to about 50% by weight CeO2 particles, based on the total weight of solids in the composition, said clay and CeO2 abrasive particles having a particle size such that at least 90% of the particles (by number), when slurried in water, have a particle size in the range of about 10 nm to about 10 μm.
Claims14
A method of planarizing or polishing a surface comprising polishing the surface with a composition comprising (a) a liquid carrier, and (b) solids comprising about 0.1 to about 10% by weight clay abrasive particles, and about 0.1% to about 50% by weight CeO2, particles, based on the total weight of the composition, said clay abrasive particles having a particle size such that at least 90% of the particles, by number, when dispersed in water, have a particle size in the range of about 10nm to about 10μm, and the CeO2 abrasive particles having a particle size such that at least 90% of the particles, by number, when dispersed in water, have a particle size in the range of larger than 0.1μm to about 10μm.
Dependencies are inferred from the claim text.