Method for improving hard bias properties of layers in a magnetoresistive sensor
AssigneeHitachi Global Storage Technologies
InventorsPhong V. Chau, James Mac Freitag, Mustafa Michael Pinarbasi, Hua Ai Zeng, Howard Gordon Zolla
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Abstract
A method for improving hard bias properties of layers of a magnetoresistance sensor is disclosed. Properties of the hard bias layer are improved using a seedlayer structure that includes at least a first layer of silicon and a second layer comprising chromium or chromium molybdenum. Further, benefits are achieved when the seedlayer structure includes a layer of tantalum.
Claims22
A method of forming a spin valve sensor, comprising:
- forming a ferromagnetic free layer structure that has a magnetic moment;
- forming a ferromagnetic pinned layer structure having a magnetic moment;
- forming a nonmagnetic conductive spacer layer between the free layer structure and the pinned layer structure;
- forming an anti-ferromagnetic pinning layer coupled to the pinned layer structure for pinning the magnetic moment of the pinned layer structure;
- forming hard magnetic thin films on both sides of at least a portion of the free layer structure, the ferromagnetic pinned layer structure, the nonmagnetic conductive spacer layer and the anti-ferromagnetic pinning layer;
- and
- forming a hard bias seedlayer structure adjacent to and on opposite sides of at least a portion of the free layer structure, the ferromagnetic pinned layer structure, the nonmagnetic conductive spacer layer and the anti-ferromagnetic pinning layer, wherein the forming the hard bias seedlayer structure comprises forming at least a first layer comprising silicon and a second layer comprising chromium or chromium molybdenum.
A method of forming a spin valve sensor, comprising:
- forming a spin valve structure including a ferromagnetic free layer, a ferromagnetic
- pinned layer and an anti-ferromagnetic pinning layer;
- forming hard magnetic thin films adjacent at least a portion of the spin valve structure on both sides of the spin valve structure;
- and
- forming a hard bias seedlayer structure adjacent to and on opposite sides of at least a portion of the spin valve structure, wherein the forming the hard bias seedlayer structure comprises forming at least a first layer comprising silicon and a second layer comprising chromium or chromium molybdenum.
A method of forming a hard bias seedlayer structure, comprising:
- forming a first layer comprising silicon adjacent to and on opposite sides of a spin valve structure;
- and
- forming a second layer comprising chromium or chromium molybdenum adjacent to the first layer.
Dependencies are inferred from the claim text.