Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer

A magnetic element comprising:

• a first pinned layer;
• a first spacer layer, the first spacer layer being nonmagnetic;
• a first free layer, the first spacer layer residing between the first pinned layer and the first free layer;
• a heat assisted switching layer, the first free layer residing between the first spacer layer and the heat assisted switching layer, the heat assisted switching layer for improving a thermal stability of the first free layer when the first free layer is not being switched, the heat assisted switching layer is at least two nanometers thick;
• a second free layer, the heat assisted switching layer residing between the first free layer and the second free layer, the first free layer and the second free layer being magnetostatically coupled;
• a second spacer layer, the second spacer layer being nonmagnetic;
• a second pinned layer, the second spacer layer residing between the second free layer and the second pinned layer;
• wherein the magnetic element is configured to allow the first free layer to be switched due to spin transfer when a write current is passed through the magnetic element;
• and
• wherein the heat assisted switching layer improves the thermal stability of the first free layer when the first free layer is not being switched via a magnetic coupling with the first free layer, the magnetic coupling being substantially reduced when the write current is passed through the magnetic element.

A method of providing magnetic element comprising:

• (a) providing a pinned layer;
• (b) providing a spacer layer, the spacer layer being nonmagnetic;
• (c) providing a free layer, the spacer layer residing between the pinned layer and the free layer;
• (d) providing a heat assisted switching layer, the free layer residing between the spacer layer and the heat assisted switching layer, the heat assisted switching layer for improving a thermal stability of the free layer when the free layer is not being switched, and the heat assisted switching layer improving the thermal stability of the free layer when the free layer is not being switched via a magnetic coupling with the free layer, the magnetic coupling being substantially reduced when the write current is passed through the magnetic element;
• wherein the magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element;
• and
• wherein the heat assisted switching layer improves the thermal stability of the free layer when the free layer is not being switched via a magnetic coupling with the free layer, the magnetic coupling being substantially reduced when the write current is passed through the magnetic element.

A method for providing magnetic element comprising:

• (a) providing a first pinned layer;
• (b) providing a first spacer layer, the first spacer layer being nonmagnetic;
• (c) providing a first free layer, the first spacer layer residing between the first pinned layer and the first free layer;
• (d) providing a heat assisted switching layer, the first free layer residing between the first spacer layer and the heat assisted switching layer, the heat assisted switching layer for improving a thermal stability of the first free layer when the first free layer is not being switched;
• (e) providing a second free layer, the heat assisted switching layer residing between the first free layer and the second free layer, the first free layer and the second free layer being magnetostatically coupled;
• (f) providing a second spacer layer, the second spacer layer being nonmagnetic;
• (g) providing a second pinned layer, the second spacer layer residing between the second free layer and the second pinned layer;
• wherein the magnetic element is configured to allow the first free layer to be switched due to spin transfer when a write current is passed through the magnetic element;
• and
• wherein the heat assisted switching layer improves the thermal stability of the first free layer when the first free layer is not being switched via a magnetic coupling with the first free layer, the magnetic coupling being substantially reduced when the write current is passed through the magnetic element.

A method for utilizing a magnetic element in a magnetic memory comprising:

• heating a portion of the magnetic element during switching of the magnetic element, the magnetic element including a pinned layer, a spacer layer, a free layer, and a heat assisted switching layer, the free layer residing between the spacer layer and the heat assisted switching layer, the heat assisted switching layer for improving a thermal stability of the free layer when the free layer is not being switched, the spacer layer being nonmagnetic and layer residing between the pinned layer and the free layer, the portion being heated including the heat assisted switching layer;
• and
• applying a read current for reading the magnetic element;
• wherein the magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.