Method of manufacturing an ultra-miniature magnetic device

A method for fabricating a magnetic device using semiconductor technology comprising the steps of:

• forming a first conductor over a substrate;
• patterning a first photoresist layer disposed over the first conductor, thereby forming via holes that expose a portion of the first conductor;
• forming first partial via structures within the via holes that are connected to the first conductor;
• patterning a second photoresist layer disposed over the first conductor and the first partial via structures to form via holes co-linear with the first partial via structures;
• forming second partial via structures within the co-linear via holes that are connected to the first partial via structures;
• forming a magnetic core arrangement disposed over the first conductor using a portion of the second photoresist layer;
• patterning a third photoresist layer disposed over the magnetic core arrangement and the second partial via structures to form via holes co-linear with the second partial via structures;
• forming third partial via structures within the co-linear via holes that are connected to the second partial via structures;
• and
• forming a second conductor over the magnetic core arrangement connected to the third partial via structures, thereby forming via structures adapted to electrically connect the first conductor to the second conductor.

A method for fabricating a magnetic device using semiconductor technology comprising the steps of:

• forming a first conductor over a substrate;
• patterning a first photoresist layer disposed over the first conductor and using the first photoresist layer as an interlayer dielectric and to form a magnetic core arrangement disposed over the first conductor;
• patterning the first photoresist layer to form via holes that expose a portion of the first conductor and forming first partial via structures within the via holes that are connected to the first conductor;
• patterning a second photoresist layer disposed over the magnetic core arrangement and the first partial via structures to form via holes co-linear with the first partial via structures;
• forming second partial via structures within the co-linear via holes that are connected to the first partial via structures;
• and
• forming a second conductor over the magnetic core arrangement connected to the second partial via structures, thereby forming via structures adapted to electrically couple the first conductor to the second conductor.

A method for fabricating a magnetic device using semiconductor technology comprising the steps of:

• forming a first conductor over a substrate;
• patterning a first photoresist layer disposed over the first conductor to form via holes that expose a portion of the first conductor;
• forming first partial via structures within the via holes that are connected to the first conductor;
• forming a magnetic core arrangement disposed over the first conductor using a portion of a second photoresist layer disposed over the first photoresist layer and the first partial via structures;
• patterning the second photoresist layer to form via holes co-linear with the first partial via structures;
• forming second partial via structures within the co-linear via holes that are connected to the first partial via structures;
• patterning a third photoresist layer disposed over the magnetic core arrangement and the second partial via structures to form via holes co-linear with the second partial via structures;
• forming third partial via structures within the co-linear holes that are connected to the second partial via structures;
• and
• forming a second conductor over the magnetic core arrangement connected to the third partial via structures, thereby forming via structures adapted to electrically connect the first conductor to the second conductor.