High speed electron tunneling devices

An electron tunneling device comprising:

• a) first and second non-insulating layers spaced apart from one another such that a given voltage can be applied across the first and second non-insulating layers;
• and
• b) an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers, said arrangement including i) a first insulating layer such that using only said first insulating layer would result in a given degree of nonlinearity in said transport of electrons, with respect to said given voltage, ii) a different, second insulating layer disposed directly adjacent to and configured to cooperate with said first insulating layer such that the transport of electrons includes, at least in part, transport by means of tunneling, and such that said nonlinearity in the transport of electrons, with respect to said given voltage, is increased over and above said given degree of nonlinearity by the inclusion of said second insulating layer without the necessity for any additional layers, and iii) a third layer of material configured to further increase said nonlinearity in the transport of electrons, with respect to said given voltage, over and above said given degree of nonlinearity.

An electron tunneling device comprising:

• a) a first arrangement including first and second non-insulating layers spaced apart from one another such that a given voltage can be applied across the first and second non-insulating layers;
• and
• b) a second arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between and to said first and second non-insulating layers, said arrangement including i) a first insulating layer such that using only said first insulating layer would result in a given degree of nonlinearity in said transport of electrons, with respect to said given voltage, and ii) a different, second insulating layer disposed directly adjacent to and configured to cooperate with said first insulating layer such that the transport of electrons includes, at least in part, transport by electron tunneling, and such that said nonlinearity in the transport of electrons, with respect to said given voltage, is increased over and above said given degree of nonlinearity by the inclusion of said second insulating layer.