Atomic layer deposited Zr-Sn-Ti-O films
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
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Abstract
A dielectric film containing atomic layer deposited Zr—Sn—Ti—O and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing titanium and oxygen onto a substrate surface by atomic layer deposition, depositing zirconium and oxygen onto a substrate surface by atomic layer deposition, and depositing tin and oxygen onto a substrate surface by atomic layer deposition form the Zr—Sn—Ti—O dielectric layer. Dielectric films containing atomic layer deposited Zr—Sn—Ti—O are thermodynamically stable such that the Zr—Sn—Ti—O will have minimal reactions with a silicon substrate or other structures during processing.
Claims71
A method of forming a dielectric film comprising forming a Zr—Sn—Ti—O film on a surface by atomic layer deposition, wherein each metal of the Zr—Sn—Ti—O film is deposited independent of each of the other metals of the Zr—Sn—Ti—O film.
A method of forming a dielectric film comprising forming a Zr—Sn—Ti—O film on a surface by atomic layer deposition, wherein atomic layer deposition includes pulsing metal chloride precursors for each metal in the Zr—Sn—Ti—O.
A method of forming a dielectric film comprising:
- depositing titanium and oxygen onto a surface by atomic layer deposition;
- depositing zirconium and oxygen onto the surface by atomic layer deposition;
- and
- depositing tin and oxygen onto the surface by atomic layer deposition, wherein each of depositing titanium, depositing zirconium, and depositing tin are independent depositions from each other to form a Zr—Sn—Ti—O film.
A method of forming a dielectric film comprising:
- depositing titanium and oxygen onto a surface by atomic layer deposition;
- depositing zirconium and oxygen onto the surface by atomic layer deposition;
- and
- depositing tin and oxygen onto the surface by atomic layer deposition, wherein depositing titanium and oxygen onto a surface by atomic layer deposition includes pulsing a TiCl4 precursor.
A method of forming a dielectric film comprising:
- forming TiO2 onto a surface by atomic layer deposition;
- depositing zirconium and oxygen onto the surface by atomic layer deposition;
- and
- depositing tin and oxygen onto the surface by atomic layer deposition, wherein forming TiO2, depositing zirconium and oxygen, and depositing tin and oxygen are performed independently of each other to form a Zr—Sn—Ti—O film.
A method of forming a dielectric film comprising:
- forming TiO2 onto a surface by atomic layer deposition;
- depositing zirconium and oxygen onto the surface by atomic layer deposition;
- and
- depositing tin and oxygen onto the surface by atomic layer deposition, wherein depositing TiO2 onto a surface by atomic layer deposition includes pulsing a TiCl4 precursor.
A method of forming a dielectric film comprising:
- forming TiO2 onto a surface by atomic layer deposition;
- depositing zirconium and oxygen onto the surface by atomic layer deposition;
- and
- depositing tin and oxygen onto the surface by atomic layer deposition, wherein depositing zirconium and oxygen onto the surface by atomic layer deposition includes pulsing a ZrCl4 precursor.
A method of forming a dielectric film comprising:
- forming TiO2 onto a surface by atomic layer deposition;
- depositing zirconium and oxygen onto the surface by atomic layer deposition;
- and
- depositing tin and oxygen onto the surface by atomic layer deposition, wherein depositing tin and oxygen onto the surface by atomic layer deposition includes pulsing a SnCl4 precursor.
A method of forming a capacitor, comprising:
- forming a first conductive layer on a substrate;
- forming a dielectric film containing a Zr—Sn—Ti—O film on the first conductive layer by atomic layer deposition, wherein each metal in the Zr—Sn—Ti—O film is deposited independent of each of the other metals in the Zr—Sn—Ti—O film;
- and
- forming a second conductive layer on the dielectric film.
A method of forming a capacitor, comprising:
- forming a first conductive layer on a substrate;
- forming a dielectric film containing Zr—Sn—Ti—O on the first conductive layer by atomic layer deposition;
- and
- forming a second conductive layer on the dielectric film, wherein forming a dielectric film containing Zr—Sn—Ti—O on the first conductive layer by atomic layer deposition includes regulating the deposition of zirconium, tin, titanium, and oxygen to form a dielectric film having a dielectric constant in the range from about 50 to about 70.
A method of forming a capacitor, comprising:
- forming a first conductive layer on a substrate;
- forming a dielectric film containing Zr—Sn—Ti—O on the first conductive layer by atomic layer deposition;
- and
- forming a second conductive layer on the dielectric film, wherein forming a dielectric film containing Zr—Sn—Ti—O on the first conductive layer by atomic layer deposition includes regulating the deposition of zirconium, tin, titanium, and oxygen to form a dielectric film having a dielectric constant in the range from about 33 to about 37.
A method of forming a capacitor, comprising:
- forming a first conductive layer on a substrate;
- forming a dielectric film containing Zr—Sn—Ti—O on the first conductive layer by atomic layer deposition;
- and
- forming a second conductive layer on the dielectric film, wherein forming the dielectric film containing Zr—Sn—Ti—O on the first conductive layer includes:
- depositing titanium and oxygen onto the first conductive layer by atomic layer deposition;
- depositing zirconium and oxygen onto the first conductive layer by atomic layer deposition;
- and
- depositing tin and oxygen onto the first conductive layer by atomic layer deposition, wherein forming the dielectric film containing Zr—Sn—Ti—O on the first conductive layer includes pulsing a TiCl4 precursor, pulsing a ZrCl4 precursor, and pulsing a SnCl4 precursor.
A method of forming a transistor comprising:
- forming a source region and a drain region in a substrate, the source region and the drain region separated by a body region;
- forming a dielectric film containing Zr—Sn—Ti—O on the body region between the source and drain regions by atomic layer deposition;
- and
- coupling a gate to the dielectric film.
A method of forming a memory array comprising:
- forming a number of access transistors, at least one of the access transistors including a dielectric film containing Zr—Sn—Ti—O on a body region between a source region and a drain region, the dielectric film containing Zr—Sn—Ti—O formed by atomic layer deposition;
- forming a number of word lines coupled to a number of the gates of the number of access transistors;
- forming a number of source lines coupled to a number of the source regions of the number of access transistors;
- and
- forming a number of bit lines coupled to a number of the drain regions of the number of access transistors.
A method of forming an electronic system comprising:
- providing a processor;
- coupling a memory array to the processor, wherein the memory array includes at least one access transistor having a dielectric film containing Zr—Sn—Ti—O on a body region between a source region and a drain region, the dielectric film containing Zr—Sn—Ti—O formed by atomic layer deposition.
A dielectric layer comprising a film containing atomic layer deposited Zr—Sn—Ti—O, wherein each metal of the Zr—Sn—Ti—O is deposited independent of each of the other metals of the Zr—Sn—Ti—O.
A capacitor, comprising:
- a first conductive layer;
- a dielectric layer containing atomic layer deposited Zr—Sn—Ti—O, the dielectric layer disposed on the first conductive layer, wherein each metal of the Zr—Sn—Ti—O is deposited independent of each of the other metals of the Zr—Sn—Ti—O;
- and
- a second conductive layer disposed on the dielectric layer.
A capacitor, comprising:
- a first conductive layer;
- a dielectric layer containing atomic layer deposited Zr—Sn—Ti—O, the dielectric layer disposed on the first conductive layer;
- and
- a second conductive layer disposed on the dielectric layer, wherein the dielectric layer exhibits a dielectric constant in the range from about 50 to about 70.
A transistor comprising:
- a body region between a source region and a drain region;
- a dielectric layer containing atomic layer deposited Zr—Sn—Ti—O disposed on the body region between the source region and the drain region;
- and
- a gate coupled to the dielectric film.
A memory array comprising:
- a number of access transistors, at least one access transistor including a gate coupled to a dielectric layer containing atomic layer deposited Zr—Sn—Ti—O the dielectric layer disposed on a body region between a source region and a drain region;
- a number of word lines coupled to a number of the gates of the number of access transistors;
- a number of source lines coupled to a number of the source regions of the number of access transistors;
- and
- a number of bit lines coupled to a number of the drain regions of the number of access transistors.
An electronic system comprising a dielectric layer containing atomic layer deposited Zr—Sn—Ti—O, wherein each metal of the Zr—Sn—Ti—O is deposited independent of each of the other metals of the Zr—Sn—Ti—O.
An electronic system comprising:
- a processor;
- a system bus;
- and
- a memory array coupled to the processor by the system bus, the memory array including:
- a number of access transistors, at least one access transistor having a gate coupled to a dielectric film containing atomic layer deposited Zr—Sn—Ti—O, the dielectric film disposed on a body region between a source region and a drain region;
- a number of word lines coupled to a number of the gates of the number of access transistors;
- a number of source lines coupled to a number of the source regions of the number of access transistors;
- and
- a number of bit lines coupled to a number of the drain regions of the number of access transistors.
Dependencies are inferred from the claim text.