Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation

A method for forming a common ground for an microelectromechanical device comprising acts of:

• patterning a common ground plane layer on a substrate;
• forming a dielectric layer on the common ground plane layer;
• depositing a DC electrode region through the dielectric layer to contact the common ground plane layer;
• and
• depositing a conducting layer on the DC electrode region so that regions of the conducting layer contact the DC electrode region, so that the common ground plane layer provides a common ground electrical contact for the regions of the conducting layer, wherein the method for forming the common ground for the microelectromechanical device further comprising acts of
• depositing a sacrificial layer on the dielectric layer and the conducting layer, the sacrificial layer having a thickness;
• and
• etching a plurality of tooth regions into the sacrificial layer proximate a portion of the conducting layer, such that the tooth regions, in a final device, provide a reduced adhesion area when the device closes.