Sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsYouichi Ohsawa, Katsuhiro Kobayashi, Yoshitaka Yanagi, Kazunori Maeda
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Abstract
A chemical amplification type resist composition comprising a specific sulfonyldiazomethane containing long-chain alkoxyl groups has many advantages including improved resolution, improved focus latitude, minimized line width variation or shape degradation even on long-term PED, minimized debris left after coating, development and peeling, and improved pattern profile after development and is thus suited for microfabrication.
Claims15
A sulfonyldiazomethane compound having the following general formula (1):
- wherein R is independently hydrogen or a substituted or unsubstituted straight, branched or cyclic alkyl or alkoxy group of 1 to 4 carbon atoms, G is SO2 or CO, R3 is a substituted or unsubstituted straight, branched or cyclic alkyl group of 1 to 10 carbon atoms or a substituted or unsubstituted aryl group of 6 to 14 carbon atoms, p is 1 or 2, q is 0 or 1, satisfying p+q=2, n is 2 or 3, n′ is 0 or 1, m is independently an integer of 3 to 11, and k is an integer of 0 to 4.
A sulfonyldiazomethane compound having the following general formula (1a):
- wherein R1 and R2 are each independently R or CH3(CH2)mO, excluding the combination that both R1 and R2 are R at the same time, R is hydrogen or a substituted or unsubstituted straight, branched or cyclic alkyl or alkoxy group of 1 to 4 carbon atoms, and m is an integer of 3 to 11.
Dependencies are inferred from the claim text.