Re-configurable logic elements using heat assisted magnetic tunneling elements

A magnetic logic array comprising:

• a plurality of magnetic logic cells, each of the plurality of magnetic logic cells including a magnetic element having a pinned layer, a free layer, and a spacer layer, the pinned layer having a pinned layer magnetization;
• the free layer having a free layer magnetization, the spacer layer residing between the pinned layer and the free layer;
• a plurality of first configuration lines, each of the plurality of first configuration lines electrically connected to the magnetic element of a first portion of the plurality of magnetic logic cells, the first configuration line for carrying a first current having a first current magnitude;
• a plurality of second configuration lines, each of the plurality of second configuration lines electrically insulated from the magnetic element and from the first configuration line of a second portion of the plurality of magnetic logic cells, the second configuration line for carrying a second current having a second current magnitude, the first current and the second current alone incapable of switching the free layer magnetization, the first current and the second current together in a particular direction capable of switching the free layer magnetization, and wherein the first current driven through the magnetic element and the second current capable of setting the pinned layer magnetization to a pinned layer magnetization direction.

A magnetic logic cell comprising;

• a pinned layer having a pinned layer magnetization;
• a free layer having a free layer magnetization;
• a spacer layer residing between the pinned layer and the free layer;
• and
• an antiferromagnetic layer having a blocking temperature such that a first current driven through the magnetic element heats the antiferromagnetic layer to be in a sufficiently disordered state that the pinned layer magnetization can be set in a pinned layer magnetization direction;
• wherein the first current alone is insufficient to switch the free layer magnetization.