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AssigneeLuxtera, Inc.
InventorsLawrence C. Gunn, III, Thierry J. Pinguet, Maxime Jean Rattier
Estimating the term…
In a standard CMOS process, a layer of metallic salicide can be deposited on those selected portions of an integrated circuit, where it is desired to have metallic contacts for electronic components, such as transistors. The deposition of a salicide into optical devices such as the core of an optical waveguide or a light scatterer will damage the devices and prevent the passage of light through those sections of the devices. Prior to the deposition of the salicide, a salicide blocking layer is deposited on those parts of an integrated circuit, such as on an optical waveguide or a light scatterer, which are to be protected from damage by the deposition of salicide. The salicide blocking layer is used as one layer of the cladding of a silicon waveguide and a light scatterer.
A light scattering element for an optical waveguide with a core, where the core of the waveguide is comprised of monocrystalline silicon, the core and a silicon body of a transistor are formed from the same layer of monocrystalline silicon on the same substrate, and
Dependencies are inferred from the claim text.