Loading patent…
AssigneeHitachi, Ltd.
InventorsAtsuko Yamaguchi, Tsuneo Terasawa, Tadashi Otaka, Takashi Iizumi, Osamu Komuro
Estimating the term…
The present invention provides a circuit pattern edge inspection method of finding out a failure in a fabricating process and image distortion in an observing apparatus by analyzing, by a non-destructive inspection, the shape of an edge of a line of a fine pattern in which characteristics of the material, process, and an exposure optical system in a semiconductor fabricating process appear, and performing analysis quantitatively. The method includes a step of detecting a set of edge points indicative of positions of edges of the pattern in a two-dimensional plane by a threshold method; a step of obtaining an approximation line for the set of edge points detected; and a step of obtaining an edge roughness shape and a characteristic by calculating the difference between the set of the edge points and the approximation line. A plurality of values are used as thresholds used for the threshold method.
A circuit pattern inspection method of inspecting a pattern shape on the basis of two-dimensional distribution information of intensities of secondary electrons or reflected electrons obtained by observing a pattern formed on a substrate by a scanning microscope using a charged particle beam, comprising:
A circuit pattern inspection method of inspecting a pattern shape on the basis of two-dimensional distribution information of intensities of secondary electrons or reflected electrons obtained by observing a pattern formed on a substrate by a scanning microscope using a charged particle beam, comprising:
Dependencies are inferred from the claim text.