Laser irradiation method, laser irradiation apparatus, and semiconductor device

A method of irradiating with a laser, said method comprising the steps of:

• providing a glass substrate having a non-single semiconductor film formed over the glass substrate with an insulating film interposed therebetween;
• irradiating the non-single semiconductor film with the laser,
• wherein an output power Lw (W) of the laser and a spot size Sp (cm2) on an irradiated surface satisfy the following relationships,
• Lw>2×105Sp, and
• Sp>2.5×10−5.

A method of irradiating with a laser, said method comprising the steps of:

• providing a glass substrate having a non-single semiconductor film formed over the glass substrate with an insulating film interposed therebetween;
• irradiating the non-single semiconductor film with the laser,
• wherein an output power Lw (W) of the laser and a spot size Sp (cm2) on an irradiated surface satisfy the following relationships,
• Lw>2×103Sp, and
• Sp>2.5×10−5.

A method of irradiating with a laser having a linear shape on an irradiated surface, said method comprising the steps of:

• providing a glass substrate having a non-single semiconductor film formed over the glass substrate with an insulating film interposed therebetween;
• irradiating the non-single semiconductor film with the laser having the linear shape,
• wherein an output power Lw (W) of the laser and a spot size Sp (cm2) on the irradiated surface satisfy the following relationships,
• Lw>1×105Sp, and
• Sp>2.5×10−5.

A method of irradiating with a laser having a linear shape on an irradiated surface, said method comprising the steps of:

• providing a glass substrate having a non-single semiconductor film formed over the glass substrate with an insulating film interposed therebetween;
• irradiating the non-single semiconductor film with the laser having the linear shape,
• wherein an output power Lw (W) of the laser and a spot size Sp (cm2) on the irradiated surface satisfy the following relationships,
• Lw>2×105Sp, and
• Sp>2.5×10−5.

A method of irradiating with a laser having a linear shape on an irradiated surface, said method comprising the steps of:

• providing a glass substrate having a non-single semiconductor film formed over the glass substrate with an insulating film interposed therebetween;
• irradiating the non-single semiconductor film with the laser having the linear shape,
• wherein an output power Lw (W) of the laser and a spot size Sp (cm2) on the irradiated surface satisfy the following relationships,
• Lw>2×103Sp, and
• Sp>2.5×10−5.

A method of manufacturing a semiconductor device comprising:

• forming a semiconductor film on an insulating surface;
• irradiating the semiconductor film with a laser to crystallize said semiconductor film,
• wherein an output power Lw (W) of the laser and a spot size Sp (cm2) on an irradiated surface satisfy the following relationships,
• Lw>1×105Sp, and
• Sp>2.5×10−5.