Magnetoresistive memory cell array and MRAM memory comprising such array
AssigneeKoninklijke Philips Electronics N.V.
InventorsAnthonie Meindert Herman Ditewig, Roger Cuppens
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Abstract
The present invention describes a matrix with magnetoresistive memory cells arranged in logically organized rows and columns, Each memory cell includes a magnetoresistive element. The matrix comprises means for simultaneously reading from one cell in a column and writing to another cell in a column, or means for simultaneous reading from one cell in a row and writing to another cell in the same row. Such matrix can be used in a read-while-write MRAM memory.
Claims14
A matrix (38) with magnetoresistive memory cells arranged in logically organized rows and columns, each memory cell including a magnetoresistive element (2), furthermore comprising means for simultaneously reading from one cell in a column and writing to another cell in a column, or means for simultaneous reading from one cell in a row and writing to another cell in the same row.
A matrix (38) according to any of the previous claims, wherein the magnetoresistive elements (2) comprise a magnetic tunnel junction (MTJ).
A read-while-write MRAM memory comprising a matrix (38) according to any of the previous claims and selecting circuitry for selecting a cell to be read and a cell to be written.
A method of operating a matrix (38) with magnetoresistive memory cells arranged in logically organized rows and columns, each cell including a magnetoresistive element (2), comprising simultaneously reading from one cell in a column and writing to another cell in the same column or simultaneously reading from one cell in a row and writing of another cell in the same row.
Dependencies are inferred from the claim text.