Electrode for an energy storage device
AssigneeEnergy Storage Systems PTY LTD
InventorsPeter John Mahon, Clodoveo Simone Sacchetta, Calum John Drummond, Phillip Brett Aitchison
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AssigneeEnergy Storage Systems PTY LTD
InventorsPeter John Mahon, Clodoveo Simone Sacchetta, Calum John Drummond, Phillip Brett Aitchison
Estimating the term…
An electrode for an energy storage device, including a substrate of at least one metal that forms a native oxide layer; and a treated layer formed on the substrate from the native oxide layer, the treated layer having a resistance that is less than the resistance of a native oxide layer. In some embodiments, the treated layer possesses at least one of the following properties: includes one or more dopants, is thinner than the native oxide layer, has a carbon coating that is applied to the treated layer which improved adhesion characteristics, and others. Further, there is an energy storage device having two or more of such electrodes, wherein the device has a low initial ESR and/or a low ESR at various intervals. Moreover, disclosed is a low resistance metal including a substrate of at least one metal that forms a native oxide layer; and a treated layer formed on the substrate from the native oxide layer, the treated layer having a resistance that is less than the resistance of a native oxide layer. Additionally, methods relating to the above devices are also disclosed.
An energy storage device having two or more electrodes, wherein at least one of the electrodes includes a substrate of at least one metal that forms a native oxide layer, and a treated layer formed on the substrate from the native oxide layer, the treated layer having a resistance that is less than the resistance of a native oxide layer;
An energy storage device having two or more electrodes, wherein at least one of the electrodes includes a substrate of at least one metal that forms a native oxide layer, and a treated layer formed on the substrate from the native oxide layer, the treated layer having a resistance that is less than the resistance of a native oxide layer;
Dependencies are inferred from the claim text.