Plasma processing apparatus, method for operating the same, designing system of matching circuit, and plasma processing method

A method for operating a plasma processing apparatus, comprising:

• a first matching circuit adjusting step of matching an output impedance of a matching circuit to an impedance of the plasma processing chamber before discharge;
• a power feeding step of feeding RF power to the plasma processing chamber;
• a discharge detecting step of detecting discharge by the RF power in the plasma processing chamber;
• and
• a second matching circuit adjusting step of matching the output impedance of the matching circuit to the impedance of the plasma processing chamber during the discharge.

A plasma processing method comprising:

• a first matching circuit adjusting step of matching an output impedance of a matching circuit to an impedance of the plasma processing chamber before discharge;
• a power feeding step of feeding RF power to the plasma processing chamber;
• a discharge detecting step of detecting discharge by the RF power in the plasma processing chamber;
• and
• a second matching circuit adjusting step of matching an output impedance of the matching circuit to an impedance of the plasma processing chamber during the discharge.

A plasma processing apparatus comprising:

• a radio frequency generator;
• a plasma processing chamber;
• and
• a product matching circuit for impedance matching between the radio frequency generator and the plasma processing chamber;
• wherein the product matching circuit is produced based on a circuit constant of an adjusting matching circuit which is disposed between the radio frequency generator and the plasma processing chamber for a required plasma treatment and the circuit constant is determined by impedance matching between the radio frequency generator and the plasma processing chamber so that the adjusting matching circuit matches the load impedance of the plasma processing chamber;
• and
• wherein the product matching circuit adjusts the impedance within a range including an impedance Z0 before plasma discharge and an impedance Z1 after plasma discharge of the plasma processing chamber.

A plasma processing apparatus comprising:

• a radio frequency generator;
• a plasma processing chamber;
• and
• a product matching circuit for impedance matching between the radio frequency generator and the plasma processing chamber;
• wherein the product matching circuit is produced based on a circuit constant of an adjusting matching circuit which is disposed between the radio frequency generator and the plasma processing chamber for a required plasma treatment and the circuit constant is determined by impedance matching between the radio frequency generator and the plasma processing chamber so that the adjusting matching circuit matches the load impedance of the plasma processing chamber;
• and
• wherein the plasma processing chamber has a measuring terminal that measures an impedance Z0 of the plasma processing chamber before plasma discharge.

A matching circuit designing system of a plasma processing apparatus comprising:

• an adjusting matching circuit of which the output impedance is controlled by adjusting an internal variable passive device;
• displacement measuring means for measuring the displacement of the variable passive device by drive means;
• reflected wave measuring means for measuring reflected waves of electric power supplied from a radio frequency generator when a plasma is discharged;
• drive control means for controlling the variable passive device by the drive means to minimize the reflected waves;
• computing means for calculating the impedance Z1 of the plasma processing chamber after the plasma is discharged, based on the displacement at the minimized reflected waves;
• and
• designing means for designing the circuit constant of the passive device constituting the product matching circuit based on the impedance Z1,
• wherein these means are connected through an information communication network by communication means, and
• wherein the plasma processing chamber comprises impedance measuring means for measuring the impedance Z0 of the plasma processing chamber before plasma discharge, the impedance measuring mean outputting the impedance Z0 to the designing means.

A plasma processing apparatus comprising:

• a radio frequency generator;
• a plasma processing chamber;
• and
• a matching circuit for impedance matching between the radio frequency generator and the plasma processing chamber, wherein the output impedance of the matching circuit is adjustable to match the impedance of the plasma processing chamber in a nondischarge state, the adjustment based at least in part on a first stored value corresponding to the impedance of the plasma chamber in a non-discharge state.

A matching circuit designing system for a plasma processing apparatus comprising:

• an adjustable matching circuit having an output impedance controllable by adjusting an internal variable passive device;
• a displacement measuring unit configured for measuring the displacement of the variable passive device from a reference position;
• a reflected wave detector configured to measure reflected waves of electric power supplied from a radio frequency generator when a plasma is discharged into a plasma processing chamber;
• a drive control unit for controlling the variable passive device to minimize the reflected waves;
• a processor configured to calculate the impedance Z1 of the plasma processing chamber after the plasma is discharged, based on the displacement of the variable passive device at the minimized reflected waves;
• and
• a design subsystem configured to design a product matching circuit having a passive device with a circuit constant, wherein the design of the product matching circuit is based on the impedance Z1, and
• wherein the design subsystem and the processor are connected through an information communication network by communication means.