Semiconductor integrated circuit device with a connective portion for multilevel interconnection

A semiconductor integrated circuit device, comprising:

• a first interconnect formed over a semiconductor substrate;
• an insulating film formed over a semiconductor substrate and on said first interconnect;
• a hole formed in said insulating film and having a bottom from which the surface of said first interconnect is partly exposed;
• a first conductive film formed on the bottom and sidewall of said hole and being in contact with said first interconnect;
• and
• a second conductive film formed on said first conductive film and embedded inside of said hole,
• wherein said first conductive film includes a perpendicular portion arranged along the sidewall of said hole, a corner portion arranged near the corner of said hole and a level portion arranged along the bottom of said hole,
• wherein the thickness of said level portion of said first conductive film is gradually increasing from the center of said hole toward outside, and
• wherein the resistance of said first interconnect and the resistance of said second conductive film are lower than the resistance of said first conductive film.