High-Frequency semiconductor device with noise elimination characteristic

Abstract

The object of the present invention is to implement an enhancement in a noise eliminating characteristic of a wiring compatibly with promotion of microfabrication and simplification of a manufacturing process. Upper and side surfaces of a wiring (6) for transmitting a signal are continuously covered by a conductor layer (12) with insulators (7), (8) and (9) interposed therebetween in a section crossing a direction of extension thereof, and the conductor layer (12) is connected to a semiconductor substrate (1). Moreover, a periphery of a wiring (15) for transmitting a signal is continuously covered by the conductor layer (12) and a conductor layer (19) with insulators (14), (16), (17) and (18) interposed therebeween in a section crossing a direction of extension thereof. The wiring (15) is electrically connected to the semiconductor substrate (1) through a conductive plug (13) filled in a contact hole (24) formed in the conductor layer (12).

Dependencies are inferred from the claim text.