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US 7,095,114 B2Granted
Semiconductor device with via hole group generating high frequency electromagnetic bonding, manufacturing method thereof, and monolithic microwave integrated circuit
AssigneeSharp Kabushiki Kaisha
InventorsNaoki Takahashi, Nobuyuki Matsumoto, Kazuhiko Shirakawa, Yoshinori Motouchi
Life of this patent
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Abstract
An amplifier GaAs MMIC for microwave band applications includes a ground electrode 8 having a via hole group 12 composed of three via holes 11 filled with plated metals 10a that are formed adjacently. The interaction thereby generates high frequency electromagnetic bonding, which reduces the ground inductance. According to the MMIC, the ground inductance of the via hole may be reduced while decrease of a strength and increase of a size being restrained.
Claims10
A semiconauctor device comprising:
- a semiconductor element formed on one side of a semiconductor substrate, the semiconductor element having a ground electrode and at least one via hole group formed in the semiconductor substrate, the ground electrode of the semiconductor element being connected to an electrode provided on the other side of the semiconductor substrate by means of the via hole group,
- wherein the via hole group includes a plurality of via holes disposed directly adjacent to each other so that an electromagnetic field generated in each of the plurality of adjacent via holes in the group is bonded to each other
- wherein a distance between the plurality of via holes at a closest adjacent point is in the range of 5 μm to 50 μm.
Dependencies are inferred from the claim text.