Semiconductor constructions
AssigneeMicron Technology, Inc.
InventorsTongbi Jiang, Zhiping Yin
Life of this patent
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Abstract
The invention includes a semiconductor construction. The construction has a semiconductor material die with a front surface, a back surface in opposing relation to the front surface, and a thickness of less than 400 microns between the front and back surfaces. The construction also has circuitry associated with the die and over the front surface of the die, and a layer touching the back surface of the die. The layer can correspond to getter-inducing material and/or to a stress-inducing material. The layer can have a composition which includes silicon dioxide and/or silicon nitride. The composition can include one or more hydrogen isotopes, and the hydrogen isotopes can have a higher abundance of deuterium than the natural abundance of deuterium.
Claims34
A semiconductor construction comprising:
- a semiconductive material die having a front surface, a back surface in opposing relation to the front surface, and a thickness of less than 400 microns between the front surface and the back surface;
- circuitry associated with the die and over the front surface of the die;
- and
- a layer touching the back surface of the die;
- said layer consisting essentially of silicon, nitrogen and one or more hydrogen isotopes.
A semiconductor construction comprising:
- a semiconductive material die having a front surface, a back surface in opposing relation to the front surface, and a thickness of less than 400 microns between the front surface and the back surface;
- circuitry associated with the die and over the front surface of the die;
- and
- a layer touching the back surface of the die;
- said layer consisting essentially of silicon, oxygen, nitrogen and one or more hydrogen isotopes.
A semiconductor construction comprising:
- a semiconductive material die having a front surface, a back surface in opposing relation to the front surface, and a thickness of less than 400 microns between the front surface and the back surface;
- circuitry associated with the die and over the front surface of the die;
- and
- a deuterium-containing layer along the back surface of the die.
A semiconductor construction comprising:
- a semiconductive material die having a front surface, a back surface in opposing relation to the front surface, at least one sidewall surface extending from the front surface to the back surface, and a thickness of less than 400 microns between the front surface and the back surface;
- circuitry associated with the die and over the front surface of the die;
- a nitrogen-containing material touching the back surface of the die and touching at least a portion of said at least one sidewall surface;
- and
- wherein the nitrogen-containing material comprises SixNy:D, where x and y are numbers greater than zero, and where the D indicates that the ratio of deuterium to any hydrogen present in the SixNy is greater than the natural abundance of deuterium.
A semiconductor construction comprising:
- a semiconductive material die having a front surface, a back surface in opposing relation to the front surface, at least one sidewall surface extending from the front surface to the back surface, and a thickness of less than 400 microns between the front surface and the back surface;
- circuitry associated with the die and over the front surface of the die;
- a nitrogen-containing material touching the back surface of the die and touching at least a portion of said at least one sidewall surface;
- and
- wherein the nitrogen-containing material comprises SixNyOz:D, where x, y and z are numbers greater than zero, and where the D indicates that the ratio of deuterium to any hydrogen present in the SixNyOz is greater than the natural abundance of deuterium.
A semiconductor construction comprising:
- a semiconductive material die having a front surface, a back surface in opposing relation to the front surface, at least one sidewall surface extending from the front surface to the back surface, and a thickness of less than 400 microns between the front surface and the back surface;
- circuitry associated with the die and over the front surface of the die;
- a nitrogen-containing material touching the back surface of the die and touching at least a portion of said at least one sidewall surface;
- and
- wherein the at least one sidewall surface has a length extending from the front surface of the die to the back surface of the die, and wherein the nitrogen-containing material touches at least 25% of said length.
Dependencies are inferred from the claim text.