System and device including a barrier layer
AssigneeMicron Technology, Inc.
InventorsDon Carl Powell, Garry Anthony Mercaldi, Ronald A. Weimer
Life of this patent
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Abstract
Systems and devices are disclosed utilizing a silicon-containing barrier layer. A semiconductor device is disclosed and includes a substrate, a gate oxide, a silicon-containing barrier layer and a gate electrode. The gate oxide is formed over the substrate. The silicon-containing barrier layer is formed over the gate oxide by causing silicon atoms of a precursor layer react with a reactive agent. The gate electrode is formed over the silicon-containing barrier layer.
Claims4
A semiconductor device having a precursor layer comprising:
- a silicon substrate including at least one semiconductor layer;
- a first semiconductor device fabricated proximate to said substrate;
- and
- a metal-free silicon-containing precursor layer formed over at least a portion of said first semiconductor device;
- wherein said silicon-containing precursor layer comprises a silane.
A semiconductor device having a precursor layer comprising:
- a silicon substrate including at least one semiconductor layer;
- a first semiconductor device fabricated proximate to said substrate;
- and
- a metal-free silicon-containing precursor layer formed over at least a portion of said first semiconductor device;
- wherein the silicon-containing precursor layer comprises a silazane.
A semiconductor device having a precursor layer comprising:
- a silicon substrate including at least one semiconductor layer;
- a first semiconductor device fabricated proximate to said substrate;
- and
- a metal-free silicon-containing precursor layer formed over at least a portion of said first semiconductor device;
- wherein the silicon-containing precursor layer is selected from the group comprising hexamethyldisilazane, tetramethyldisilazane, octamethylcyclotetrasilazine, hexamethylcyclotrisilazine, diethylaminotrimethylsilane and dimethylaminotrimethylsilane.
A semiconductor device having a precursor layer comprising:
- a silicon substrate including at least one semiconductor layer;
- and
- a precursor layer comprising a metal-free silicon-containing material from a silazane source formed over at least a portion of said at least one semiconductor layer.
Dependencies are inferred from the claim text.