Semiconductor devices and methods of manufacturing the same
AssigneeDongbu Electronics Co., Ltd.
InventorKwan-Ju Koh
Life of this patent
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Abstract
Semiconductor devices and methods of manufacturing the same are provided. A disclosed semiconductor device includes: a semiconductor substrate; a gate insulating layer on the active region of the semiconductor substrate; a gate on the gate insulating layer; LDD regions on opposite sides of the gate insulating layer and located in the semiconductor substrate; source/drain regions on the LDD regions; and silicide layers on the surfaces of the gate and the source/drain regions. The source/drain regions are formed by doping impurities in a silicon layer grown by a selective epitaxy.
Claims20
A method of manufacturing a semiconductor device comprising;
- forming an ion implant buffer film an a semiconductor substrate;
- doping impurities to form an LDD region on the semiconductor substrate;
- removing the ion implant buffer film;
- growing a silicon layer by selective epitaxy;
- doping ion impurities on the silicon layer to form a heavily doped layer;
- forming a nitride film having a cutout wider than a gate forming region on the heavily doped layer;
- etching the heavily doped layer using the nitride film as an etch mask to form source/drain regions;
- forming a silicide preventing film on an upper surface of the LDD region and on sides of the source/drain regions;
- forming lateral spacers within the cutout on lateral sides of the nitride film and on the silicide preventing film;
- etching the silicide preventing film and the LDD region using the lateral spacers as an etch mask to expose a surface of the substrate;
- forming a gate oxide layer on the exposed surface of the substrate;
- forming a gate on the gate oxide layer;
- removing the lateral spacers and the nitride film;
- and
- forming silicide layers on the gate and the source/drain regions.
A method of manufacturing a semiconductor device comprising;
- forming an ion implant buffer film on a semiconductor substrate;
- forming an LDD region by doping impurities in the semiconductor substrate;
- removing the ion implant buffer film;
- growing a silicon layer by selective epitaxy;
- doping ion impurities on the silicon layer to form a heavily doped layer;
- forming a nitride film having a cutout wider than a gate forming region on the heavily doped layer;
- while using the nude film as an etch mask, etching the heavily doped layer to form source/drain regions;
- forming spacers on the nitride film;
- while using the spacers as an etch mask, etching the LDD region to expose a surface of the substrate;
- forming a gate oxide layer on the exposed surface of the substrate;
- forming a polysilicon layer to cover the nitride film on the gate oxide layer;
- chemical mechanical polishing the polysilicon layer to form a gate;
- forming an interlayer insulating layer on the gate;
- forming contact holes in to interlayer insulating layer exposing portions of upper surfaces of the gate and the source/drain regions;
- and
- filling the contact holes with conducting material to form conductive plugs.
A method of manufacturing a semiconductor device comprising;
- forming an LDD region on a semiconductor substrate;
- growing a silicon layer on said LDD region by selective epitaxy;
- doping ion impurities on the silicon layer to form a heavily doped layer;
- forming a nitride film having a cutout wider than a gate forming region on the heavily doped layer;
- etching the heavily doped layer using the nitride film as an etch mask to form source/drain regions;
- and
- forming a gate in the gate forming region between the source/drain regions.
Dependencies are inferred from the claim text.