US 7,095,073 B2Granted

High K artificial lattices for capacitor applications to use in Cu or Al BEOL

AssigneeChartered Semiconductor Manufacturing Ltd.

InventorsSubramanian Balakumar, Chew Hoe Ang, Jia Zhen Zheng, Paul Proctor

Life of this patent

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Abstract

An improved and new process of fabricating high dielectric constant MIM capacitors. These high dielectric constant MIM capacitor met all of the stringent requirements needed for both for both RF and analog circuit applications. For the high dielectric constant MIM capacitor, the metal is comprised of copper electrodes in a dual damascene process. The dielectric constant versus the total thickness of super lattices is controlled by the number of layers either 4/4, 2/2, and 1/1 artificial layers. Hence thickness of the film can be easily controlled. Enhancement of dielectric constant is because of interface. Dielectric constants near 900 can be easily achieved for 250 Angstrom thick super lattices. MBE, molecular beam epitaxy or ALCVD, atomic layer CVD techniques is used for this type layer growth process.

Claims8

Dependent claims

An integrated circuit metal-insulator-metal capacitor device comprising:

(a) a semiconductor substrate, having a first dielectric insulator layer of the substrate;
(b) a plurality of dual damascene trench and via openings in said first dielectric insulator layer for bottom metal electrodes;
(c) bottom metal capacitor electrodes formed in trench and via openings flush with the surface of the first dielectric insulator layer;
(d) a second dielectric insulator layer;
(e) a plurality of dual damascene trench and via openings in said second dielectric insulator layer;
(f) a metal barrier layer over the second dielectric insulator layer;
(g) a high dielectric constant insulator in trench and via openings over the metal barrier layer, wherein said insulator is for the capacitors and is a super lattice stack of atomic unit cells;
(h) top metal capacitor electrodes formed over said high dielectric constant insulator, and filling trench and via openings, planar to the surface of the second dielectric insulator layer, completing metal-insulator-metal capacitor structures.

5 more elements

Dependencies are inferred from the claim text.

Facts

Application: 10/972,551Filed 25 Oct 2004 · continuation
Priority: 2 Nov 2002
Published: US 2005/0118780 A12 Jun 2005
Granted: 22 Aug 2006
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10D 1/684
Having dielectrics comprising perovskite structures: the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or…
H10D 1/716
Having non-planar surfaces, e.g. formed by texturisation: having vertical extensions
H10P 14/6339
Using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition: deposition by cyclic CVD, e.g. ALD, ALE or…
H10P 14/6689
The compound comprising silicon and nitrogen: the compound being a silazane

Family

Application10/286,627Parent of this continuation · filed 2 Nov 2002
US 2005/0118780 A1Pre-grant publication · published 2 Jun 2005
US 6,830,971 B2Parent of this continuation
US 2004/0087101 A1Published application
US 7,095,073 B2This patent

From the US filing history. Foreign family members aren’t listed.