Method for fabricating Bi thin film and device using the same
AssigneeKorea Institute of Science and Technology
InventorsWoo Young Lee, Kyung Ho Shin, Suk Hee Han, Joon Yeon Chang, Hi Jung Kim, Dal Young Kim, Kwan Hyi Lee, Kyoung Il Lee, Min Hong Jeun
Life of this patent
Estimating the term…
Abstract
In a method for fabricating a Bi thin film having a great MR (magnetoresistance) at room temperature and a method for fabricating a spintronics device using the same, the Bi thin film is fabricated by an electrodepostiting method and a sputtering method and has very great MR characteristics at room temperature, and it can be applied to various spintronics devices.
Claims14
A magnetic field sensor comprising:
- a Bi-containing thin film as a mesa and a magnetic substance at both sides of the mesa as a flux concentrator, wherein the Bi-containing thin film has a MR ratio of approximately 600% or more at room temperature and not less than 30,000% at 4K when a magnetic filed of 9 T is applied.
A spin FET (spin-polarized field effect transistor), comprising:
- a gate;
- an insulating layer on a portion of the gate;
- a source/drain region at a side of the insulating layer;
- and
- a spin channel comprising a Bi-containing film,
- wherein the Bi-containing thin film has an MR ratio approximately 600% or more at room temperature and not less than 30,000% at 4 K when a magnetic field of 9 T is applied.
A spin FET (spin-polarized field effect transistor), comprising:
- a gate;
- an insulating layer on a portion of the gate;
- a source/drain region at a side of the insulating layer;
- and
- a spin channel comprising the Bi-containing film fabricated according to claim 7.
A method for fabricating a Bi-containing film, comprising:
- forming the Bi-containing film onto a substrate at a deposition rate of 0.1–10 μm/min by sputtering in a vacuum chamber, and
- heat processing the Bi-containing thin film at a temperature within a range of 250–270° C.
Dependencies are inferred from the claim text.