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US 7,095,066 B2Granted
Process for making a CMOS image sensor
AssigneeEastman Kodak Company
InventorJames P. Lavine
Life of this patent
Estimating the term…
Abstract
An image sensor includes a semi-conducting substrate having a photo-sensitive region and doping for forming a path to a charge-to-voltage mechanism; a dielectric spanning the substrate; and a semi-conducting layer, which is less than approximately 1 micrometer, spanning the dielectric which contains electrodes and circuit elements that control flow of charge.
Claims16
An image sensor comprising:
- (a) a semi-conducting substrate having a photo-sensitive region and doping for forming a path to a charge-to-voltage mechanism;
- (b) a dielectric spanning the substrate;
- and
- (c) a single crystal semi-conducting layer, which is less than approximately 1 micrometer, spanning the dielectric which contains electrodes and circuit elements that control flow of charge.
1 more element
A camera comprising:
- an image sensor comprising:
- (a) a semi-conducting substrate having a photo-sensitive region and doping for forming a path to a charge-to-voltage mechanism;
- (b) a dielectric spanning the substrate;
- and
- (c) a single crystal semi-conducting layer, which is less than approximately 1 micrometer, spanning the dielectric which contains electrodes and circuit elements that control flow of charge.
2 more elements
Dependencies are inferred from the claim text.