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US 7,095,065 B2Granted
Varying carrier mobility in semiconductor devices to achieve overall design goals
AssigneeAdvanced Micro Devices, Inc.
InventorsBin Yu, Shibly S. Ahmed, Haihong Wang
Life of this patent
Estimating the term…
Abstract
A semiconductor device may include a substrate and an insulating layer formed on the substrate. A first device may be formed on the insulating layer, including a first fin. The first fin may be formed on the insulating layer and may have a first fin aspect ratio. A second device may be formed on the insulating layer, including a second fin. The second fin may be formed on the insulating layer and may have a second fin aspect ratio different from the first fin aspect ratio.
Claims20
A semiconductor device, comprising:
- a substrate;
- an insulating layer formed on the substrate;
- a first device formed on the insulating layer, comprising:
- a first fin formed on the insulating layer and having a first fin aspect ratio,
- a first gate dielectric formed on four surfaces of the first fin, and
- a first gate material formed adjacent the first gate dielectric on the four surfaces of the first fin;
- and
- a second device formed on the insulating layer, comprising:
- a second fin formed on the insulating layer and having a second fin aspect ratio different from the first fin aspect ratio.
6 more elements
A semiconductor device, comprising:
- an insulating layer;
- a first device formed on the insulating layer, comprising:
- a first fin formed on the insulating layer and having a first height and a first width,
- a first dielectric layer formed on at least three sides of the first fin, and
- a first gate adjacent the first dielectric layer;
- and
- a second device formed on the insulating layer, comprising:
- a second fin formed on the insulating layer and having a second height and a second width,
- a second dielectric layer formed on at least three sides of the second fin, and
- a second gate adjacent the second dielectric layer,
- wherein a first ratio of the first height and first width is different from a second ratio of the second height and second width, and
- wherein the first ratio is selected to produce a first carrier mobility with respect to the first fin and the second ratio is selected to produce a second carrier mobility with respect to the second fin.
9 more elements
A semiconductor device, comprising:
- an insulating layer;
- an N-type device formed on the insulating layer, comprising:
- a first fin formed on the insulating layer and having a first height and a first width;
- and
- a P-type device formed on the insulating layer, comprising:
- a second fin formed on the insulating layer and having a second height and a second width,
- wherein the second width is a predetermined multiple of the first width, and
- wherein the first height and the second height are configured so that a carrier mobility of the N-type device approximately equals a carrier mobility of the P-type device.
5 more elements
Dependencies are inferred from the claim text.