Group III nitride compound semiconductor device

A translucent electrode in a Group III nitride compound semiconductor device, comprising:

• a thick portion;
• and
• a residual portion having a thickness which is less than a thickness of said thick portion, wherein said thick portion is formed on a circumferential surface of a p-type pad electrode.

A p-type electrode structure, comprising:

• a translucent electrode and a pad electrode formed on a p-type semiconductor layer in a Group III nitride compound semiconductor device,
• wherein said translucent electrode comprises a thick portion and a residual portion said residual portion comprising a thickness which is less than a thickness of said thick portion, and said thick portion being formed on a circumferential surface of said pad electrode.

A Group III nitride compound semiconductor device comprising:

• a pad electrode;
• and
• a translucent electrode having a varying thickness and comprising a thick portion which is formed on a side surface of said pad electrode.

A p-type electrode structure, comprising:

• a pad portion;
• and
• a translucent portion having a varying thickness and comprising a thick portion which is formed on a side surface of said pad portion.