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US 7,095,058 B2Granted
System and method for an improved light-emitting device
AssigneeIntel Corporation
InventorDonald S. Gardner
Life of this patent
Estimating the term…
Abstract
The improved light-emitting device may include a waveguide made with Si nanocrystals doped with optically active elements. The improved light-emitting device may be suitable for use in chip-to-chip and on-chip interconnections.
Claims32
A light-emitting device comprising:
- a substrate formed from a semiconductor material;
- a dielectric layer formed on an upper surface of the substrate;
- an optically active layer including Si nanocrystals, the optically active layer doped with a rare earth element and formed in the dielectric layer;
- and
- an optical cavity in optical communication with the optically active layer.
2 more elements
A method of forming a light-emitting device comprising:
- providing a substrate made of a semiconductor material;
- forming a dielectric layer on an upper surface of the substrate;
- forming an optically active layer on an upper surface of the dielectric layer, the optically active layer including Si nanocrystals doped with a rare earth element;
- and
- forming an optical cavity on an upper surface of the optically active layer to reflect light from the optically active layer.
2 more elements
Dependencies are inferred from the claim text.