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US 7,095,057 B2Granted
Semiconductor laser and method for manufacturing the same
AssigneeElectronics and Telecommunications Research Institute
InventorsJung Ho Song, Chul Wook Lee, Ki Soo Kim, Yong Soon Baek
Life of this patent
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Abstract
Provided is a semiconductor laser including a substrate etched into a mesa structure, an active layer, clad layers, a current blocking layer, an etch-stop, an ohmic contact layer, and electrodes, and a method for manufacturing the same, whereby it is possible to improve a ratio of light output to input current by blocking a leakage current flowing outside an active waveguide in a BH laser.
Claims10
A semiconductor laser, comprising:
- a substrate etched into a mesa structure;
- an active layer formed directly on the mesa structure and being a core of a waveguide;
- a first clad layer formed on the active layer;
- a current blocking layer formed on the etched substrate in both sides of the mesa structure;
- an etch-stop layer formed on the first clad layer and the current blocking layer;
- a second clad layer formed on the etch-stop layer being located on an upper portion of the mesa structure, with a predetermined width;
- an ohmic contact layer formed on the second clad layer;
- a first electrode contacted with the ohmic contact layer;
- and
- a second electrode formed on a bottom side of the substrate,
- wherein the current blocking layer is formed by a first p type, an n type, and a second p type semiconductor layers.
8 more elements
A semiconductor laser, comprising:
- a substrate etched into a mesa structure;
- an active layer formed on the mesa structure and being a core of a waveguide;
- a first clad layer formed on the active layer;
- a current blocking layer formed on the etched substrate in both sides of the mesa structure;
- an etch-stop layer formed on the first clad layer and the current blocking layer;
- a second clad layer formed on the etch-stop layer being located on an upper portion of the mesa structure, with a predetermined width;
- an ohmic contact layer formed on the second clad layer;
- a first electrode contacted with the ohmic contact layer;
- and
- a second electrode formed on a bottom side of the substrate;
- wherein the current blocking layer is formed by a first p type, an n type, and second p type semiconductor layers, and
- wherein the second p type semiconductor layer is formed with a thickness thinner than that of the first p type semiconductor layer.
9 more elements
A semiconductor laser, comprising:
- a substrate etched into a mesa structure;
- an active layer formed on the mesa structure and being a core of a waveguide;
- a first clad layer formed on the active layer;
- a current blocking layer formed on the etched substrate in both sides of the mesa structure;
- an etch-stop layer formed on the first clad layer and the current blocking layer;
- a second clad layer formed on the etch-stop layer being located on an upper portion of the mesa structure, with a predetermined width;
- an ohmic contact layer formed on the second clad layer;
- a first electrode contacted with the ohmic contact layer;
- and
- a second electrode formed on a bottom side of the substrate;
- wherein the current blocking layer is formed by a first p type, an n type, and a second p type semiconductor layers;
- wherein the second p type semiconductor layer is formed with a thickness thinner than that of the first p type semiconductor layer;
- and
- wherein the second p type semiconductor layer is formed with a thickness of 0.2 μm or less.
11 more elements
Dependencies are inferred from the claim text.