Nitride semiconductor element

A nitride semiconductor device having an active layer between a first electrically conductive type of layer and a second electrically conductive type of layer, wherein said active layer has a quantum well structure including at least a well layer formed of a nitride semiconductor containing Al, and a first barrier layer formed of a nitride semiconductor having a band gap energy larger than that of the well layer in a side near to the first electrically conductive type of layer from the well layer, and

• said first electrically conductive type of layer includes a first nitride semiconductor layer having a band gap energy smaller than that of said first barrier layer, and said first nitride semiconductor layer is provided near said first barrier layer,
• wherein said device is operable to oscillate light of wavelength of 375 nm or shorter,
• an AlxGa1−xN quantum well layer (x≧0) is provided between barrier layers which are formed of AlyInzGa1−y−zN (z≧0), and
• a band gap energy Ew of the well layer is larger than a band gap energy Eb of the barrier layer by 0.2 eV or greater, and
• said device has a SCH structure in which a light guiding layer and a cladding layer are provided apart from each other, and the band gap energy Eg of the guiding layer is greater than the photon energy Ep at oscillation by 0.05 eV.

A nitride semiconductor device having an active layer between a first electrically conductive type of layer and a second electrically conductive type of layer, wherein said active layer has a quantum well structure including at least a well layer formed of a nitride semiconductor containing Al, and a first barrier layer formed of a nitride semiconductor having a band gap energy larger than that of the well layer in a side near to the first electrically conductive type of layer from the well layer, and

• said first electrically conductive type of layer includes a first nitride semiconductor layer having a band gap energy smaller than that of said first barrier layer, and said first nitride semiconductor layer is provided near said first barrier layer,
• wherein said device is operable to oscillate light of wavelength of 380 nm or shorter, and
• an active layer is provided between a first electrically conductive type of layer and a second electrically conductive type of layer, and
• said active layer has a quantum well structure including at least a well layer formed of a nitride semiconductor containing In and Al, and a barrier layer formed of a nitride semiconductor containing Al, and
• said device has a laser device structure in which said first electrically conductive type of layer has a first light guiding layer, said second electrically conductive type of layer has a second light guiding layer, and said active layer is provided between said first light guiding layer and said second light guiding layer, and
• the band gap energies Eg of both said first light guiding layer and said second light guiding layer are greater than the photon energy Ep of laser light by 0.05 eV or greater (Eg−Ep0.05 eV).