Semiconductor device and method of manufacturing the same

A TV receiver comprising:

• a data wiring and a pixel electrode formed on an insulating surface;
• barrier metal formed so as to correspond to the data wiring and the pixel electrode;
• a pair of first semiconductor films of one conductivity type formed on the barrier metal;
• a second semiconductor film formed on and extending between the pair of first semiconductor films;
• a gate insulating film formed on the second semiconductor film;
• a gate electrode formed on the gate insulating film;
• and
• a storage capacitor comprising:
• a first layer comprising a same material as the pixel electrode on the insulating surface;
• a second layer comprising a same material as the barrier metal on the first layer;
• a third layer comprising a same material as the pair of first semiconductor films of one conductivity type on the second layer;
• a fourth layer comprising a same material as the second semiconductor film on the second layer;
• a fifth layer comprising a same material as the gate insulating film on the fourth layer;
• and
• a sixth layer comprising a same material as the gate electrode on the fifth layer;
• wherein an end portion of the second semiconductor film is provided inside an end portion of the barrier metal, and
• wherein each of the data wiring and the pixel electrode has tapered inner and outer edges.

A TV receiver comprising:

• at least first and second conductive films formed on an insulating surface wherein the first and second conductive films are separated from each other;
• a pair of first semiconductor films of one conductivity type formed over the first and second conductive films;
• a second semiconductor film formed on and extending between the pair of first semiconductor films;
• an insulating film including a gate insulating film formed on the second semiconductor film;
• a third conductive film including a gate electrode formed on the insulating film;
• and
• a storage capacitor comprising:
• a first layer comprising a same material as the at least first and second conductive films on the insulating surface;
• a second layer comprising a same material as the pair of first semiconductor films over the first layer;
• a third layer comprising a same material as the second semiconductor film on the second layer;
• a fourth layer comprising a same material as the insulating film on the third insulating layer;
• and
• a fifth layer comprising a same material as the third conductive film on the fourth layer,
• wherein each of the first and second conductive films and the pair of first semiconductor films has tapered inner and outer edges.

A TV receiver comprising:

• at least first and second conductive films formed on an insulating surface wherein the first and second conductive films are separated from each other;
• a pair of first semiconductor films of one conductivity type formed over the first and second conductive films;
• a second semiconductor film formed on and extending between the pair of first semiconductor films;
• an insulating film including a gate insulating film formed on the second semiconductor film;
• a third conductive film including a gate electrode formed on the insulating film;
• and
• a storage capacitor comprising:
• a first layer comprising a same material as one of the at least first and second conductive films on the insulating surface;
• a second layer comprising a same material as the pair of first semiconductor films over the first layer;
• a third layer comprising a same material as the second semiconductor film on the second layer;
• and
• a fourth layer comprising a same material as the third conductive film,
• wherein each of the pair of first semiconductor films and the second semiconductor film has tapered inner and outer edges and the pair of first semiconductor films extend beyond side edges of the second semiconductor film.

A TV receiver comprising:

• at least first and second conductive films formed on an insulating surface wherein the first and second conductive films are separated from each other;
• a pair of first semiconductor films of one conductivity type formed over the first and second conductive films;
• a second semiconductor film formed on and extending between the pair of first semiconductor films;
• an insulating film including a gate insulating film formed on the second semiconductor film;
• a third conductive film including a gate electrode formed on the insulating film;
• and
• a storage capacitor comprising:
• a first layer comprising a same material as one of the at least first and second conductive films on the insulating surface;
• a second layer comprising a same material as the pair of first semiconductor films over the first layer;
• a third layer comprising a same material as the second semiconductor film on the second layer;
• a fourth layer comprising a same material as the insulating film on the third layer;
• and
• a fifth layer comprising a same material as the third conductive film on the fourth layer,
• wherein each of the second semiconductor film and the third conductive film has tapered inner and outer edges and the second semiconductor film extends beyond side edges of the third conductive film.

A TV receiver comprising:

• at least first and second conductive films formed on an insulating surface wherein the first and second conductive films are separated from each other;
• a pair of barrier metal layers formed on the first and second conductive films wherein said barrier metal layers have a tapered outer edge;
• a pair of first semiconductor films of one conductivity type formed on the pair of barrier metal layers, respectively, wherein each of the pair of first semiconductor films has a tapered outer edge;
• a second semiconductor film formed on and extending between the pair of first semiconductor films wherein the second semiconductor film has a tapered outer edge;
• an insulating film including a gate insulating film formed on the second semiconductor film;
• a third conductive film including a gate electrode formed on the insulating film wherein said third conductive film has a tapered outer edge;
• and
• a storage capacitor comprising:
• a first layer comprising a same material as one of the at least first and second conductive films on the insulating surface;
• a second layer comprising a same material as the pair of barrier metal layers on the first layer;
• a third layer comprising a same material as the pair of first semiconductor films on the second layer;
• a fourth layer comprising a same material as the second semiconductor film on the third layer;
• a fifth layer comprising a same material as the insulating film on the fourth layer;
• and
• a sixth layer comprising a same material as the third conductive film on the fifth layer,
• wherein said insulating film extends beyond the outer edge of the third conductive film, and said second semiconductor film extends beyond the outer edge of the insulating film, and
• wherein each of the first conductive film and the second conductive film has tapered inner and outer edges.

A personal computer comprising:

• a first wiring and a second wiring formed of a first conductive film on an insulating surface;
• a second conductive film formed on the first and second wirings so as to correspond thereto;
• a pair of first semiconductor films of one conductivity type formed on the second conductive film;
• a second semiconductor film formed on and extending between the pair of first semiconductor films;
• an insulating film formed on the second semiconductor film;
• a third conductive film formed on the insulating film;
• and
• a storage capacitor comprising:
• a first layer comprising a same material as the first conductive film and the second wiring on the insulating surface;
• a second layer comprising a same material as the second conductive film on the first layer;
• a third layer comprising a same material as the pair of first semiconductor films of one conductivity type on the second layer;
• a fourth layer comprising a same material as the second semiconductor film on the second layer;
• a fifth layer comprising a same material as the insulating film on the fourth layer;
• and
• a sixth layer comprising a same material as the third conductive film on the fifth layer;
• wherein an end portion of the second semiconductor film is provided inside an end portion of the second conductive film, and
• wherein each of the first wiring and the second wiring has tapered inner and outer edges.

A personal computer comprising:

• a data wiring and a pixel electrode formed on an insulating surface;
• barrier metal formed so as to correspond to the data wiring and the pixel electrode;
• a pair of first semiconductor films of one conductivity type formed on the barrier metal;
• a second semiconductor film formed on and extending between the pair of first semiconductor films;
• a gate insulating film formed on the second semiconductor film;
• a gate electrode formed on the gate insulating film;
• and
• a storage capacitor comprising:
• a first layer comprising a same material as the pixel electrode on the insulating surface;
• a second layer comprising a same material as the barrier metal on the first layer;
• a third layer comprising a same material as the pair of first semiconductor films of one conductivity type on the second layer;
• a fourth layer comprising a same material as the second semiconductor film on the second layer;
• a fifth layer comprising a same material as the gate insulating film on the fourth layer;
• and
• a sixth layer comprising a same material as the gate electrode on the fifth layer;
• wherein an end portion of the second semiconductor film is provided inside an end portion of the barrier metal, and
• wherein each of the data wiring and the pixel electrode has tapered inner and outer edges.

A personal computer comprising:

• at least first and second conductive films formed on an insulating surface wherein the first and second conductive films are separated from each other;
• a pair of first semiconductor films of one conductivity type formed over the first and second conductive films;
• a second semiconductor film formed on and extending between the pair of first semiconductor films;
• an insulating film including a gate insulating film formed on the second semiconductor film;
• a third conductive film including a gate electrode formed on the insulating film;
• and
• a storage capacitor comprising:
• a first layer comprising a same material as the at least first and second conductive films on the insulating surface;
• a second layer comprising a same material as the pair of first semiconductor films over the first layer;
• a third layer comprising a same material as the second semiconductor film on the second layer;
• a fourth layer comprising a same material as the insulating film on the third insulating layer;
• and
• a fifth layer comprising a same material as the third conductive film on the fourth layer,
• wherein each of the first and second conductive films and the pair of first semiconductor films has tapered inner and outer edges.

A personal computer comprising:

• at least first and second conductive films formed on an insulating surface wherein the first and second conductive films are separated from each other;
• a pair of first semiconductor films of one conductivity type formed over the first and second conductive films;
• a second semiconductor film formed on and extending between the pair of first semiconductor films;
• an insulating film including a gate insulating film formed on the second semiconductor film;
• a third conductive film including a gate electrode formed on the insulating film;
• and
• a storage capacitor comprising:
• a first layer comprising a same material as one of the at least first and second conductive films on the insulating surface;
• a second layer comprising a same material as the pair of first semiconductor films over the first layer;
• a third layer comprising a same material as the second semiconductor film on the second layer;
• and
• a fourth layer comprising a same material as the third conductive film,
• wherein each of the pair of first semiconductor films and the second semiconductor film has tapered inner and outer edges and the pair of first semiconductor films extend beyond side edges of the second semiconductor film.

A personal computer comprising:

• at least first and second conductive films formed on an insulating surface wherein the first and second conductive films are separated from each other;
• a pair of first semiconductor films of one conductivity type formed over the first and second conductive films;
• a second semiconductor film formed on and extending between the pair of first semiconductor films;
• an insulating film including a gate insulating film formed on the second semiconductor film;
• a third conductive film including a gate electrode formed on the insulating film;
• and
• a storage capacitor comprising:
• a first layer comprising a same material as one of the at least first and second conductive films on the insulating surface;
• a second layer comprising a same material as the pair of first semiconductor films over the first layer;
• a third layer comprising a same material as the second semiconductor film on the second layer;
• a fourth layer comprising a same material as the insulating film on the third layer;
• and
• a fifth layer comprising a same material as the third conductive film on the fourth layer,
• wherein each of the second semiconductor film and the third conductive film has tapered inner and outer edges and the second semiconductor film extends beyond side edges of the third conductive film.

A personal computer comprising:

• at least first and second conductive films formed on an insulating surface wherein the first and second conductive films are separated from each other;
• a pair of barrier metal layers formed on the first and second conductive films wherein said barrier metal layers have a tapered outer edge;
• a pair of first semiconductor films of one conductivity type formed on the pair of barrier metal layers, respectively, wherein each of the pair of first semiconductor films has a tapered outer edge;
• a second semiconductor film formed on and extending between the pair of first semiconductor films wherein the second semiconductor film has a tapered outer edge;
• an insulating film including a gate insulating film formed on the second semiconductor film;
• a third conductive film including a gate electrode formed on the insulating film wherein said third conductive film has a tapered outer edge;
• and
• a storage capacitor comprising:
• a first layer comprising a same material as one of the at least first and second conductive films on the insulating surface;
• a second layer comprising a same material as the pair of barrier metal layers on the first layer;
• a third layer comprising a same material as the pair of first semiconductor films on the second layer;
• a fourth layer comprising a same material as the second semiconductor film on the third layer;
• a fifth layer comprising a same material as the insulating film on the fourth layer;
• and
• a sixth layer comprising a same material as the third conductive film on the fifth layer,
• wherein said insulating film extends beyond the outer edge of the third conductive film, and said second semiconductor film extends beyond the outer edge of the insulating film, and
• wherein each of the first conductive film and the second conductive film has tapered inner and outer edges.