Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorAkira Ishikawa
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Abstract
Provided is a method of realizing a semiconductor device having a structure in which a sufficient light shielding property is compatible with a sufficient storage capacitance without reducing an aperture ratio. A lower light shielding film is formed on a substrate, a TFT is formed on the lower light shielding film, and an upper light shielding film is formed on the TFT via an interlayer insulating film to cover and fit the TFT. Thus, the TFT can be completely light-shielded by the lower light shielding film and the upper light shielding film and an occurrence of a photo leak current can be prevented.
Claims28
A light emitting device comprising:
- a thin film transistor formed over a substrate, the thin film transistor having at least a semiconductor layer and a gate electrode with a gate insulating film interposed therebetween;
- a first insulating film formed over the thin film transistor;
- a second insulating film formed over the first insulating film and inside an opening portion formed by removing a portion of the first insulating film;
- a pair of wirings electrically connected to the semiconductor layer;
- and
- an organic compound layer formed between an anode and a cathode, wherein a portion of the
- organic compound layer is formed inside the opening portion.
A light emitting device comprising:
- a thin film transistor formed over a substrate, the thin film transistor having at least a semiconductor layer and a gate electrode with a gate insulating film interposed therebetween;
- a first insulating film formed over the thin film transistor;
- a second insulating film formed over the first insulating film and inside an opening portion formed by removing a portion of the first insulating film, wherein a side wall of the opening portion has a tapered cross section;
- a pair of wirings electrically connected to the semiconductor layer;
- and
- an organic compound layer formed between an anode and a cathode, wherein a portion of the organic compound layer is formed inside the opening portion.
A light emitting device comprising:
- a thin film transistor formed over a substrate, the thin film transistor having at least a semiconductor layer and a gate electrode with a gate insulating film interposed therebetween;
- a first insulating film formed over the thin film transistor;
- a second insulating film formed over the first insulating film, and inside an opening portion formed by removing a portion of the first insulating film, wherein a side wall of the opening portion has a tapered cross section, and wherein a portion of the second insulating film is in contact with the substrate;
- a pair of wirings electrically connected to the semiconductor layer;
- and
- an organic compound layer formed between an anode and a cathode, wherein a portion of the organic compound layer is formed inside the opening portion.
A light emitting device comprising:
- a thin film transistor formed over a substrate, the thin film transistor having at least a semiconductor layer and a gate electrode with a gate insulating film interposed therebetween;
- a first insulating film formed over the thin film transistor;
- a second insulating film formed over the first insulating film and inside an opening portion formed by removing a portion of the first insulating film, wherein the opening portion is formed adjacent to a substrate with the second insulating layer interposed therebetween;
- and
- an organic compound layer formed between an anode and a cathode, wherein a portion of the organic compound layer is formed inside the opening portion.
A light emitting device comprising:
- a thin film transistor formed over a substrate, the thin film transistor having at least a semiconductor layer and a gate electrode with a gate insulating film interposed therebetween;
- a first insulating film formed over the thin film transistor;
- a second insulating film formed over the first insulating film and inside an opening portion formed by removing a portion of the first insulating film, wherein a portion of the second insulating film is in contact with the substrate;
- and
- an organic compound layer formed between an anode and a cathode, wherein a portion of the organic compound layer is formed inside the opening portion.
Dependencies are inferred from the claim text.