Semiconductor device and manufacturing method thereof
AssigneeFujitsu Limited
InventorsShuichi Chiba, Masahiko Ishiguri, Koichi Murata, Eiji Watanabe, Michiaki Tamagawa, Akira Satoh, Yasushi Toida, Kazuhiro Misawa
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Abstract
A semiconductor device includes a substrate, a pad electrode formed on the substrate and a bump electrode formed on the pad electrode, wherein the pad electrode has an irregular flaw, and there is provided a pattern covering the irregular flaw between the pad electrode an the bump electrode.
Claims15
A semiconductor device comprising:
- a substrate;
- a pad electrode formed on said substrate;
- and
- a bump electrode formed on said pad electrode,
- wherein said pad electrode carries an irregular flaw, and
- a pattern is provided between said pad electrode and said bump electrode so as to cover said irregular flaw.
A manufacturing method of a semiconductor device, comprising the steps of:
- forming a pad electrode on a substrate:;
- conducting a test by contacting a probe needle to said pad electrode;
- forming a pattern on a part of surface of said pad electrode so as to cover an irregularity formed by contact of said probe needle;
- forming a conductive film on said surface of said pad electrode so as to cover said pattern;
- forming a conductive foundation film on said pad electrode by an electrolytic plating process while using said conductive film as an electrode;
- and
- forming a bump electrode on said conductive foundation film.
A manufacturing method of a semiconductor device, comprising the steps of:
- forming a pad electrode on a substrate;
- conducting a test by contacting a probe needle to said pad electrode;
- planarizing irregularity formed by contact of said probe needle;
- forming a conductive film on a surface of said pad electrode so as to cover said planarized irregularity;
- forming a conductive foundation film on said pad electrode by an electrolytic plating process while using said conductive film as an electrode;
- and
- forming a bump electrode on said conductive foundation film.
The manufacturing method of a semiconductor device wherein said polarizing step comprises the step of applying a pressure mechanically to said irregular flaw.
A manufacturing method of a semiconductor device, comprising the steps of:
- forming a pad electrode on a substrate;
- conducting a test by contacting a probe needle to said pad electrode;
- forming an electrode film on a front surface of said pad electrode so as to cover an irregularity formed by contact of said probe needle;
- forming a conductive foundation film on said pad electrode by an electrolytic plating process while using said electrode film as an electrode;
- and
- forming a bump electrode an said conductive foundation film,
- wherein said electrode film has a thickness exceeding a step height caused by said irregularity.
Dependencies are inferred from the claim text.