US 7,095,044 B2 · Field effect transistors and materials and methods for their manufacture

Abstract

A field effect transistor in which a continuous semiconductor layer comprises: a) an organic semiconductor; and, b) an organic binder which has an inherent conductivity of less than 10−6Scm−1 and a permittivity at 1,000 Hz of less than 3.3 and a process for its production comprising: coating a substrate with a liquid layer which comprises the organic semiconductor and a material capable of reacting to form the binder; and, converting the liquid layer to a solid layer comprising the semiconductor and the binder by reacting the material to form the binder.

Claims10

Dependent claims

A field effect transistor in which a continuous semiconductor layer forms a field effect channel between a source electrode and a drain electrode, wherein the continuous semiconductor layer comprises:

a) an organic semiconductor which is a conjugated aromatic molecule containing at least four aromatic rings;
and,
b)an organic binder which has an inherent conductivity of less than 10−6 Scm−1 and a permittivity at 1,000 Hz of less than 3.0;
with the proviso that the organic semiconductor does not comprise 2,5-di-n-octyloxy-1,4-bis((4′,4″-bisstyryl)styrylbenzene)(Ooct-OPV5).

1 more element

a) an organic semiconductor;
and,
b) an organic binder which has an inherent conductivity of less than 1031 6 Scm−1 and a permittivity at 1,000 Hz of less than 3.0;
with the proviso that the organic semiconductor does not comprise 2,5-di-n-octyloxy-4-bis((4,′,4″-bisstyryl)styrylbenzene)(Ooct-OPV5), said semiconductor being selected from the group consisting of:
(a) compounds having repeat units of Formula 1:
where each Y1 is independently selected from P, S, As, N and Se;
Ar1 and Ar2 are aromatic groups and Ar3 is present only if Y1 is N, P, or As in which case it too is an aromatic group;
(b) conjugated oligomeric and polymeric heterocyclic compounds comprising a repeat unit of an optionally substituted 5-membered ring and terminal groups A1 and A2 as shown in Formula 2:
in which X may be Se, Te, O, S, or —N(R)— where R represents H, optionally substituted alkyl or optionally substituted aryl;
R1, R2, A1 and A2 may be independently H, alkyl, alkoxy, thioalkyl, acyl, aryl or substituted aryl, a fluorine atom, a cyano group, a nitro group or an optionally substituted secondary or tertiary alkylamine or arylamine —N(R3)(R4), where R3 and R4 are independently H, optionally substituted alkyl, optionally substituted aryl, alkoxy or polyalkoxy groups;
(c) oligomers containing a conjugated linking group of Formula 3:
in which X may be Se, Te, O, S, or —N(R)—, R is as defined above;
R1, R2, A1 and A2 as defined above for Formula 2, Linking group L represents —C(T1)=C(T2)-, —C═C, —N(R′)—, —N═N—, (R′)═N—, —N═C(R′)— with T1 and T2 defined as above;
(d) polymers having repeat units of Formula 4:
in which X, R1 and R2 are defined as above;
(e) polymers having repeat units of Formula 7:
in which X is as defined above and the bridging group A is optionally fluorinated C1-6 alkyl;
(f) polymers having repeat units of Formula 8:
in which X, R1 and R2 are defined as above;
(g) polymers having the repeat units of Formula 9:
in which X is as defined above;
R5 and R6 may be independently H, alkyl, aryl or substituted aryl;
(h) polymers having the repeat units of Formula 10:
wherein R5 and R6 are as defined in Formula 9.

21 more elements

Dependencies are inferred from the claim text.

Field effect transistors and materials and methods for their manufacture

Life of this patent

Field effect transistors and materials and methods for their manufacture

Life of this patent

Abstract

Claims10