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US 7,095,043 B2Granted
Semiconductor device, semiconductor circuit module and manufacturing method of the same
AssigneeHitachi, Ltd.
InventorsKatsuya Oda, Nobuyuki Sugii, Makoto Miura, Isao Suzumura, Katsuyoshi Washio
Life of this patent
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Abstract
An (SiGe)C layer having a stoichiometric ratio of about 1:1 is locally formed on an Si layer, a large forbidden band width semiconductor device is prepared inside the layered structure thereof and an Si semiconductor integrated circuit is formed in the regions not formed with the layered structure, whereby high frequency high power operation of the device is enabled by the large forbidden band width semiconductor device and high performance is attained by hybridization of the Si integrated circuit.
Claims16
A semiconductor device comprising:
- an Si semiconductor substrate;
- an insulating film having an opening formed on the Si semiconductor substrate;
- a first single crystal layer disposed in the opening;
- and
- a second single crystal layer formed on the first single crystal layer;
- wherein the first single crystal layer and the second single crystal layer each comprises a single crystal (SiGe)C layer having one or both of Si and Ge, and C as essential constituent ingredients, and a stoichiometric ratio of the sum of Si and Ge to C being about 1:1, and a forbidden band width of the first single crystal layer is different from that of the second crystal layer.
3 more elements
A semiconductor device comprising:
- an Si semiconductor substrate;
- an insulating film having an opening formed on the Si semiconductor substrate;
- a first single crystal layer disposed in the opening;
- a second single crystal layer formed on the first single crystal layer;
- and
- a third single crystal layer formed on the second single crystal layer;
- wherein the first single crystal layer, the second single crystal layer, and the third single crystal layer each comprises a single crystal (SiGe)C layer having one or both of Si and Ge, and C as essential constituent ingredients, and a stoichiometric ratio of the sum of Si and Ge to C being about 1:1, and a forbidden band width of at least one of the first single crystal layer, the second single crystal layer, and the third single crystal layer is different from those of the other layers.
4 more elements
A semiconductor device comprising:
- an Si semiconductor substrate;
- an insulating film having an opening formed on the Si semiconductor substrate;
- a layered structure including one or both of the first single crystal layer formed in the opening and the second single crystal layer formed on the first single crystal layer;
- a gate electrode formed on the second single crystal layer,
- a channel region formed at a portion facing the gate electrode in one or both of the first single crystal layer and the second single crystal layer,
- wherein the first single crystal layer and the second single crystal layer each comprises a single crystal (SiGe)C layer having a stoichiometric ratio of the sum of Si and Ge to C being about 1:1;
- and
- a source electrode and a drain electrode interposing the gate electrode therebetween.
5 more elements
A semiconductor integrated circuit device comprising:
- a semiconductor device, said semiconductor device including:
- an Si semiconductor substrate;
- a first semiconductor device comprising:
- an insulating film having an opening formed on the Si semiconductor substrate;
- a first single crystal layer disposed in the opening;
- and
- a second single crystal layer formed on the first single crystal layer;
- wherein the first single crystal layer and the second single crystal layer each comprises a single crystal (SiGe)C layer having one or both of Si and Ge, and C as essential constituent ingredients, and a stoichiometric ratio of the sum of Si and Ge to C being about 1:1, and a forbidden band width of the first single crystal layer is different from that of the second crystal layer;
- and
- a second semiconductor device using Si for an operation active layer.
7 more elements
A semiconductor circuit module at least having a semiconductor device, said semiconductor device comprising:
- an Si semiconductor substrate;
- an insulating film having an opening formed on the Si semiconductor substrate;
- a first single crystal layer disposed in the opening;
- and
- a second single crystal layer formed on the first single crystal layer;
- wherein the first single crystal layer and the second single crystal layer each comprises a single crystal (SiGe)C layer having one or both of Si and Ge, and C as essential constituent ingredients, and a stoichiometric ratio of the sum of Si and Ge to C being about 1:1, and a forbidden band width of the first single crystal layer is different from that of the second crystal layer.
3 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film having an opening on an Si semiconductor substrate;
- forming a first single crystal layer in the opening;
- and
- forming a second single crystal layer on the first single crystal layer;
- wherein the first single crystal layer and the second single crystal layer each has a single crystal (SiGe)C layer comprising one or both of Si, Ge, and C as essential constituent ingredients, and having a stoichiometric ratio of the sum of Si and Ge, and C being about 1:1, and a forbidden band width of the first single crystal layer is different from that of second single crystal layer.
2 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming an insulating film having an opening on an Si semiconductor substrate;
- forming a first single crystal layer in the opening;
- forming a second single crystal layer on the first single crystal layer;
- and
- forming a third single crystal layer on the second single crystal layer;
- wherein the first single crystal layer, the second single crystal layer, and the third single crystal layer each has a single crystal (SiGe)C layer comprising one or both of Si, Ge, and C as essential constituent ingredients, and having a stoichiometric ratio of the sum for Si and Ge to C being about 1:1, and a forbidden band width of at least one of the first single crystal layer, the second single crystal layer, and the third single crystal layer is different from those of the other layers.
3 more elements
Dependencies are inferred from the claim text.