High-efficiency light emitting diode

A light emitting diode comprising:

• a substrate;
• a first compound semiconductor layer formed on the top surface of the substrate;
• a first electrode formed on a region of the first compound semiconductor layer;
• an active layer formed on a region of the first compound semiconductor layer excluding the region with the first electrode, in which 430 nm or less wavelength light is generated;
• a second compound semiconductor layer formed on the active layer;
• a second transparent electrode formed on the second compound semiconductor layer, with a filling ratio of 20–80% with respect to the area of the top surface of the substrate;
• and
• a first cladding layer between the active layer and the first compound semiconductor layer and a second cladding layer between the active layer and the second compound semiconductor layer, the first and second cladding layers having a smaller refractive index than the active layer.

A light emitting diode having a flip-chip structure, comprising:

• a flip-chip body including:
• a substrate that transmits light;
• a first compound semiconductor layer formed on the top surface of the substrate;
• a first electrode formed on a region of the first compound semiconductor layer;
• an active layer formed on a region of the first compound semiconductor layer excluding the region with the first electrode layer, in which 430 nm or less wavelength light is generated;
• a second compound semiconductor layer formed on the active layer;
• and a second electrode formed on the second compound semiconductor layer, with a filling ratio of 20–80% with respect to the area of the top surface of the substrate;
• a sub mount to which the first and second electrodes of the flip-chip body are attached by soldering;
• and
• bonding pads formed on the sub mount to connect the first and second electrodes to an external power source.

A light emitting diode having a flip-chip structure, comprising:

• a flip-chip body including:
• a substrate that transmits light;
• a first compound semiconductor layer formed on the top surface of the substrate;
• a first electrode formed on a region of the first compound semiconductor layer;
• an active layer formed on a region of the first compound semiconductor layer excluding the region with the first electrode layer, in which 430 nm or less wavelength light is generated;
• a second compound semiconductor layer formed on the active layer;
• and a second electrode formed on the second compound semiconductor layer, with a filling ratio of 20–80% with respect to the area of the top surface of the substrate;
• a sub mount to which the first and second electrodes of the flip-chip body are attached by soldering;
• bonding pads formed on the sub mount to connect the first and second electrodes to an external power source;
• and
• a first cladding layer between the active layer and the first compound semiconductor layer and a second cladding layer between the active layer and the second compound semiconductor layer, the first and second cladding layers having a smaller refractive index than the active layer.