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US 7,094,713 B1Granted
Methods for improving the cracking resistance of low-k dielectric materials
AssigneeNovellus Systems, Inc.
InventorsDong Niu, Haiying Fu, Brian Lu, Feng Wang
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Abstract
Methods for improving the mechanical properties of a CDO film are provided. The methods involve, for instance, providing either a dense CDO film or a porous CDO film in which the porogen has been removed followed by curing the CDO film at an elevated temperature using either a UV light treatment, an e-beam treatment, or a plasma treatment such that the curing improves the mechanical toughness of the CDO dielectric film.
Claims12
A method for improving the mechanical properties of a CDO dielectric film comprising:
- providing either a dense CDO dielectric film or a porous CDO film in which the porogen has been removed, and wherein the dense or porous CDO film was produced from at least a precursor having a carbon—carbon triple bond;
- and
- curing the CDO dielectric film using a UV light treatment whereby the curing improves the mechanical toughness of the CDO dielectric film;
- wherein the wavelength of the UV light is between about 200–400 nm.
1 more element
Dependencies are inferred from the claim text.