High performance MIS capacitor with HfO2 dielectric

A method of forming a capacitor including a hafnium dioxide dielectric comprising:

• forming a bottom electrode;
• forming a barrier layer on the bottom electrode
• forming a first atomic scale hafnium oxide layer on the barrier layer by
• introducing an organic hafnium precursor into the vacuum chamber under conditions sufficient to form a chemisorbed layer of the organic hafnium precursor on the substrate;
• purging the reaction chamber to remove substantially all of the organic hafnium precursor not included in the chemisorbed layer;
• introducing a first oxidant into the vacuum chamber under conditions sufficient to cause the first oxidant to react with the chemisorbed layer to form hafnium oxide and reaction byproducts;
• purging the vacuum chamber to remove substantially all remaining first oxidant and a major portion of the reaction byproducts;
• forming additional atomic scale hafnium oxide layers by repeatedly
• introducing the organic hafnium precursor into the vacuum chamber under conditions sufficient to form a chemisorbed layer of the organic hafnium precursor on a previous atomic scale hafnium oxide layer;
• purging the reaction chamber to remove substantially all of the organic hafnium precursor not included in the chemisorbed layer;
• introducing the first oxidant into the vacuum chamber under conditions sufficient to cause the first oxidant to react with the chemisorbed layer to form hafnium oxide and reaction byproducts;
• purging the vacuum chamber to remove substantially all unreacted first oxidant and a major portion of the reaction byproducts
• to produce a hafnium oxide layer of thickness t including n atomic scale hafnium oxide layers, wherein n≧4;
• treating the hafnium oxide layer with a second oxidant for a first flush period sufficient to reduce a level of organic contamination throughout substantially the entire thickness t of the hafnium oxide layer;
• and
• forming a top electrode to complete the capacitor.

A method of manufacturing a semiconductor device including a capacitor having a hafnium dioxide dielectric comprising:

• forming a bottom electrode on a semiconductor substrate;
• forming a barrier layer on the bottom electrode
• forming a first atomic scale hafnium oxide layer on the barrier layer by
• introducing an organic hafnium precursor into the vacuum chamber under conditions sufficient to form a chemisorbed layer of the organic hafnium precursor on the substrate;
• purging the reaction chamber to remove substantially all of the organic hafnium precursor not included in the chemisorbed layer;
• introducing a first oxidant into the vacuum chamber under conditions sufficient to cause the first oxidant to react with the chemisorbed layer to form hafnium oxide and reaction byproducts;
• purging the vacuum chamber to remove substantially all remaining first oxidant and a major portion of the reaction byproducts;
• forming additional atomic scale hafnium oxide layers by repeatedly
• introducing the organic hafnium precursor into the vacuum chamber under conditions sufficient to form a chemisorbed layer of the organic hafnium precursor on a previous atomic scale hafnium oxide layer;
• purging the reaction chamber to remove substantially all of the organic hafnium precursor not included in the chemisorbed layer;
• introducing the first oxidant into the vacuum chamber under conditions sufficient to cause the first oxidant to react with the chemisorbed layer to form hafnium oxide and reaction byproducts;
• purging the vacuum chamber to remove substantially all unreacted first oxidant and a major portion of the reaction byproducts
• to produce a hafnium oxide layer of thickness t including n atomic scale hafnium oxide layers, wherein n≧4;
• treating the hafnium oxide layer with a second oxidant for a first flush period sufficient to reduce a level of organic contamination throughout substantially the entire thickness t of the hafnium oxide layer;
• forming a top electrode to complete the capacitor;
• and
• completing the manufacture of the semiconductor device without exposing the capacitor to a temperature sufficient to cause crystallization of the hafnium oxide layer.