Very low dielectric constant plasma-enhanced CVD films

A chemical vapor deposition method for producing a nano-porous layer, comprising:

• placing a substrate in a deposition chamber,
• introducing into the deposition chamber a gas mixture comprising a linear organosilicon compound, a non-silicon containing thermally labile compound comprising one or more organic groups, and an oxygen containing compound, wherein the non-silicon containing thermally labile compound is a multiply unsaturated cycloalkane;
• reacting the gas mixture in the presence of RF power to deposit a silicon/oxygen material comprising organic groups on the substrate;
• and
• removing a sufficient amount of the organic groups from the silicon/oxygen material to form a nano-porous silicon oxide layer having a dielectric constant of less than about 2.5.

A chemical vapor deposition method for producing a nano-porous layer, comprising:

• placing a substrate in a deposition chamber;
• introducing into the deposition chamber a gas mixture comprising a linear organosilicon compound, a non-silicon containing thermally labile compound comprising one or more organic groups, and an oxygen containing compound, wherein the non-silicon containing thermally labile compound is selected from the group consisting of vinyl-1,4-dioxinyl ether, vinyl furyl ether, vinyl-1,4-dioxin, vinyl furan, methyl furoate, furyl formate, furyl acetate, furaldehyde, difuryl ketone, difuryl ether, difurfuryl ether, furan, 1,4-dioxin, and fluorinated carbon derivatives thereof;
• reacting the gas mixture in the presence of RF power to deposit a silicon/oxygen material comprising organic groups on the substrate;
• and
• removing a sufficient amount of the organic groups from the silicon/oxygen material to form a nano-porous silicon oxide layer having a dielectric constant of less than about 2.5.

A chemical vapor deposition method for producing a nano-porous layer, comprising:

• placing a substrate in a deposition chamber;
• introducing into the deposition chamber reactive gases comprising a linear organosilicon compound, a non-silicon containing thermally labile compound, and carbon dioxide;
• reacting the reactive gases to deposit a silicon/oxygen material comprising organic groups on the substrate;
• and
• converting the organic groups to gaseous products that evolve from the silicon/oxygen material to form a nano-porous layer having a dielectric constant of less than about 2.5.

A chemical vapor deposition method for producing a nano-porous layer, comprising:

• placing a substrate in a deposition chamber;
• introducing into the deposition chamber a gas mixture comprising a linear organosilicon compound comprising oxygen, a non-silicon containing compound comprising two or more carbon-carbon double bonds, and an oxygen containing compound;
• reacting the gas mixture in the presence of RF power to deposit a silicon/oxygen material comprising organic groups on the substrate;
• and
• exposing the silicon/oxygen material to an elevated temperature to evolve the organic groups from the silicon/oxygen material and form a nano-porous silicon oxide layer having a dielectric constant of less than about 2.5.